表面活性剂对CdSe量子点荧光性能的影响

通过添加不同类型的表面活性剂在水相中制备了CdSe量子点。用透射电子显微镜(TEM)、X射线衍射(XRD)、X-射线光电子能谱(XPS)对其进行了表征,并用紫外-可见(UV-Vis)和荧光(PL)分光光度法研究了不同类型的表面活性剂对CdSe量子点吸收光谱和荧光光谱的影响。结果表明,加入长链的非离子型和阴离子型表面活性剂制备的CdSe量子点颗粒只有几个纳米,分散性好,量子点的荧光强度也有明显的增强,而加入阳离子表面活性剂制备的量子点颗粒团聚明显,其荧光出现淬灭。     

Effect of annealing on performance of PEDOT:PSS/n-GaN Schottky solar cells

We develop a heterojunction-based Schottky solar cell consisting of n-type GaN and PEDOT：PSS and also investigate the effect of annealing on the performance of the solar cell. The results show that the open circuit voltage （Voc） increases from 0.54 V to 0.56 V, 0.71 V and 0.82 eV while decreases to 0.69 eV after annealing at 100 ℃, 130 ℃, 160 ℃, and 200 ℃, respectively, which can be ascribed to the change of barrier height of PEDOT：PSS/GaN Schottky contact induced by variation of the work function of the PEDOT：PSS. Furthermore, the conductivity and surface roughness measurements of the PEDOT：PSS indicate that annealing can increase the grain size and improve the connectivity between PEDOT and PSS particles, and cause thermal degradation at the same time, which leads to the rise in short-circuit current density （ISC） up to 160 ℃ and the dropoff in ISC after annealing at 200 ℃.     

Hybrid solar cell based on polythiophene and GaN nanoparticles composite

Hybrid solar cells based on poly(3-hexylthiophene)(P3HT)and Galium nitride(GaN)nanoparticle bulk heterojunction are fabricated and analyzed.The GaN nanocrystal is synthesized by means of a combination of sol–gel process with high temperature ammoniation using Ga(OC2H5)as a precursor.Their characteristics are determined by X-ray diffraction,X-ray photoelectron spectroscopy,and scanning electron microscopy.With the addition of GaN nanoparticle to P3HT,the device performance is greatly enhanced.