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We investigate the effects of strain on the electronic and magnetic properties of ReS_2 monolayer with sulfur vacancies using density functional theory.Unstrained ReS_2 monolayer with monosulfur vacancy(V_s) and disulfur vacancy(V_(2S))both are nonmagnetic.However,as strain increases to 8%,V_S-doped ReS_2 monolayer appears a magnetic half-metal behavior with zero total magnetic moment.In particular,for V_(2S)-doped ReS_2 monolayer,the system becomes a magnetic semiconductor under 6%strain,in which Re atoms at vicinity of vacancy couple anti-ferromagnetically with each other,and continues to show a ferromagnetic metal characteristic with total magnetic moment of 1.60μb under 7%strain.Our results imply that the strain-manipulated ReS_2 monolayer with V_S and V_(2S) can be a possible candidate for new spintronic applications. 相似文献
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在外加垂直磁场的石墨烯系统中,基于格林函数方法以自能的形式理论研究了电荷杂质散射和光学声子散射中心对朗道能谱的影响,采用久保(Kubo)公式研究了单层石墨烯的磁光电导谱以及跃迁选择定则。具体计算中电子-杂质库仑相互作用考虑了介电环境的屏蔽效应,对由散射引起的自能以及单粒子格林函数做自洽计算,另外在强磁场下单杂质散射是一个很好的近似模型。理论计算结果表明电荷杂质散射引起朗道能级对称展宽;同时考虑电荷杂质和光学声子两类散射后态密度表现为非对称的展宽。研究结果表明磁光电导谱的峰值和强度强烈依赖于填充因子和态密度。 相似文献
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