Effect of annealing on performance of PEDOT:PSS/n-GaN Schottky solar cells

We develop a heterojunction-based Schottky solar cell consisting of n-type GaN and PEDOT：PSS and also investigate the effect of annealing on the performance of the solar cell. The results show that the open circuit voltage （Voc） increases from 0.54 V to 0.56 V, 0.71 V and 0.82 eV while decreases to 0.69 eV after annealing at 100 ℃, 130 ℃, 160 ℃, and 200 ℃, respectively, which can be ascribed to the change of barrier height of PEDOT：PSS/GaN Schottky contact induced by variation of the work function of the PEDOT：PSS. Furthermore, the conductivity and surface roughness measurements of the PEDOT：PSS indicate that annealing can increase the grain size and improve the connectivity between PEDOT and PSS particles, and cause thermal degradation at the same time, which leads to the rise in short-circuit current density （ISC） up to 160 ℃ and the dropoff in ISC after annealing at 200 ℃.     

Hybrid solar cell based on polythiophene and GaN nanoparticles composite

Hybrid solar cells based on poly(3-hexylthiophene)(P3HT)and Galium nitride(GaN)nanoparticle bulk heterojunction are fabricated and analyzed.The GaN nanocrystal is synthesized by means of a combination of sol–gel process with high temperature ammoniation using Ga(OC2H5)as a precursor.Their characteristics are determined by X-ray diffraction,X-ray photoelectron spectroscopy,and scanning electron microscopy.With the addition of GaN nanoparticle to P3HT,the device performance is greatly enhanced.