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通过考虑体散射、界面电荷的库仑散射以及 Al2O3/InxGa1-xAs 界面粗糙散射等主要散射机理, 建立了以 Al2O3为栅介质InxGa1-xAs n 沟金属-氧化物-半导体场效应晶体管 (nMOSFETs) 反型沟道电子迁移率模型, 模拟结果与实验数据有好的符合. 利用该模型分析表明, 在低至中等有效电场下, 电子迁移率主要受界面电荷库仑散射的影响; 而在强场下, 电子迁移率则取决于界面粗糙度散射. 降低界面态密度, 减小 Al2O3/InxGa1-xAs 界面粗糙度, 适当提高In含量并控制沟道掺杂在合适值是提高 InGaAs nMOSFETs 反型沟道电子迁移率的主要途径.
关键词:
InGaAs
MOSFET
反型沟道电子迁移率
散射机理 相似文献
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Improved interface properties of an Hf02 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer 下载免费PDF全文
A GaAs metal-oxide-semiconductor (MOS) capacitor with HfO2 as gate dielectric and silicon nitride (SiNx) as the interlayer (IL) is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance- voltage characteristic, lower leakage current density (0.785 × 10^-6 Alcm^2 at Vfo + 1 V) and lower interface-state density (2.9 × 10^12 eV^-1 ·cm^-2) compared with other samples with N2- or NH3-plasma pretreatment. The influences of post- deposition annealing temperature on electrical properties are also investigated for the samples with SiNx IL. The sample annealed at 600 ℃ exhibits better electrical properties than that annealed at 500 ℃, which is attributed to the suppression of native oxides, as confirmed by XPS analyses. 相似文献
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Improved interface properties of an HfO_2 gate dielectric GaAs MOS device by using SiN_x as an interfacial passivation layer 下载免费PDF全文
A GaAs metal-oxide-semiconductor (MOS) capacitor with HfO2 as gate dielectric and silicon nitride (SiNx ) as the interlayer (IL) is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance-voltage characteristic, lower leakage current density (0.785 × 10-6 A/cm2 at Vfb + 1V) and lower interface-state density (2.9 × 10 12 eV-1 ·cm-2 ) compared with other samples with N2-or NH3-plasma pretreatment. The influences of post-deposition annealing temperature on electrical properties are also investigated for the samples with SiNx IL. The sample annealed at 600℃ exhibits better electrical properties than that annealed at 500℃, which is attributed to the suppression of native oxides, as confirmed by XPS analyses. 相似文献
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