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We use the multiple-scattering cluster method to calculated the sulphur 1s near-edge x-ray absorption fine structure (NEXAFS) of S-passivated InP(100) surface.The physical origins of the resonances in the NEXAFS have been unveiled.It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulphur and the nearest indium atoms.The studies show that two S-S dimers with the bond lengths of 2.05A and 3.05A coexist in the surface,meanwhile the bridge and antibridge site adsorption of single S could not be ruled out.We support the scanning tunnelling microscopy result that the S-passivated InP(100) surface exhibits significant discorder.  相似文献   
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庄飞  唐景昌 《物理学报》2000,49(3):570-576
用多理散射团族(MSC)理论对CO/NiO(100)和NO/NiO(100)吸附系统的C1s近边X射线吸收精细结构(NEXAFS)和N1s NEXAFS谱进行了详细的计算和分析。理论计算表明CO/NiO(100)是弱物理吸附,CO分子与表面的多极静电相互作用很弱,σ共振不依赖C-O键长的变化,MSC方法分析表明,CO是以C原子朝下,吸附在衬底的Ni-O键上,可靠性因子计算显示C原子的吸附位置距Ni  相似文献   
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