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We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires (TM-NW) growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10nm by 5nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM (c-AFM), the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2×10-2Ω・cm. 相似文献
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