表面离子阱的衬底效应模型研究及新型离子阱设计

通过分析表面离子阱衬底的功率损失和电势损失对离子阱阱深和离子加热速率的影响,提出考虑衬底效应的阱深和离子加热速率的解析分析模型.研究发现,硅基衬底的电势损失对表面离子阱阱深的降幅达17.19%,功率损失对离子加热速率的加速达13.37%.为了降低衬底效应的不利影响,设计了衬底真空隔离结构的表面离子阱,在离子阱射频电极和直流电极间的衬底表面刻蚀出多条隔离槽,从而减小衬底的等效电导和等效电容,达到降低衬底功率和电势损失的目的.模拟结果显示,相比于一般结构,真空隔离结构的硅基表面离子阱能够使阱深加深20.22%,使衬底功率损失降低54.55%.     

Semi-analytical model for quasi-double-layer surface electrode ion traps

To realize scale quantum processors,the surface-electrode ion trap is an effective scaling approach,including singlelayer,double-layer,and quasi-double-layer traps.To calculate critical trap parameters such as the trap center and trap depth,the finite element method(FEM) simulation was widely used,however,it is always time consuming.Moreover,the FEM simulation is also incapable of exhibiting the direct relationship between the geometry dimension and these parameters.To eliminate the problems above,House and Madsen et al.have respectively provided analytic models for single-layer traps and double-layer traps.In this paper,we propose a semi-analytical model for quasi-double-layer traps.This model can be applied to calculate the important parameters above of the ion trap in the trap design process.With this model,we can quickly and precisely find the optimum geometry design for trap electrodes in various cases.     

Wavelength Extended InGaAsBi Detectors with Temperature-Insensitive Cutoff Wavelength

We demonstrate a wavelength extended InGaAsBi short-wave infrared photodetector on an InP substrate with the 50% cutoff wavelength up to 2.63μm at room temperature. The moderate growth temperature is applied to balance the Bi incorporation and material quality. Photoluminescence and x-ray diffraction reciprocal space mapping measurements reveal the contents of bismuth and indium in InGaAsBi to be about 2.7% and 76%,respectively. The InGaAsBi detector shows the temperature-insensitive cutoff wavelength with a low coefficient of about 0.96 nm/K. The demonstration indicates the InP-based InGaAsBi material is a promising candidate for wavelength extended short-wave infrared detectors working.