Strain-induced magnetism in ReS_2 monolayer with defects

We investigate the effects of strain on the electronic and magnetic properties of ReS_2 monolayer with sulfur vacancies using density functional theory.Unstrained ReS_2 monolayer with monosulfur vacancy(V_s) and disulfur vacancy(V_(2S))both are nonmagnetic.However,as strain increases to 8%,V_S-doped ReS_2 monolayer appears a magnetic half-metal behavior with zero total magnetic moment.In particular,for V_(2S)-doped ReS_2 monolayer,the system becomes a magnetic semiconductor under 6%strain,in which Re atoms at vicinity of vacancy couple anti-ferromagnetically with each other,and continues to show a ferromagnetic metal characteristic with total magnetic moment of 1.60μb under 7%strain.Our results imply that the strain-manipulated ReS_2 monolayer with V_S and V_(2S) can be a possible candidate for new spintronic applications.