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由黄伟民主编的中专学校规划教材工科各专业通用《物理》(第二版)上册P57的例}↓↑↓↑↑↓{↓↑↑↓↑↓}hh图2用2.0s乙甲Δh1用1.0s用3.0s用3.0s用1.0s1hΔ甲乙用2.0s图2.152-7和P76的习题3.16欠妥.57页例题:... 相似文献
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Guangbao Lu 《中国物理 B》2023,32(1):18506-018506
The total ionizing dose (TID) effect is a key cause for the degradation/failure of semiconductor device performance under energetic-particle irradiation. We developed a dynamic model of mobile particles and defects by solving the rate equations and Poisson's equation simultaneously, to understand threshold voltage shifts induced by TID in silicon-based metal-oxide-semiconductor (MOS) devices. The calculated charged defect distribution and corresponding electric field under different TIDs are consistent with experiments. TID changes the electric field at the Si/SiO2 interface by inducing the accumulation of oxide charged defects nearby, thus shifting the threshold voltage accordingly. With increasing TID, the oxide charged defects increase to saturation, and the electric field increases following the universal 2/3 power law. Through analyzing the influence of TID on the interfacial electric field by different factors, we recommend that the radiation-hardened performance of devices can be improved by choosing a thin oxide layer with high permittivity and under high gate voltages. 相似文献
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团簇动力学(CD)是一种快速模拟材料辐照损伤长时间动力学演化方法.基于平均场速率理论的CD不考虑级联内的缺陷空间关联效应.而实体动力学蒙特卡罗(OKMC)模型虽然考虑空间关联效应,但受到时间尺度和辐照剂量的限制.将模拟粒子初级辐照级联缺陷分布的Monte Carlo模型(IM3D)与OKMC基于常数时间退火方法进行耦合,有效计及级联内的缺陷空间关联性,作为CD模型的有效辐照产生项,建立计及空间关联效应的团簇动力学模型(CD-SC).结果表明:CD-SC模拟的辐照损伤结果与长时间OKMC结果吻合.有助于提高典型辐照条件下核材料长时间辐照损伤的多尺度模型的准确度和效率. 相似文献
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为准确描述硼离子注入硅后缺陷/杂质的动力学物理过程,获得硼浓度空间分布及其演化行为,构建一个跨尺度带电缺陷动力学模型,考虑离子注入缺陷的产生及其演化的多种微观过程,包括缺陷电荷态和带电缺陷间的反应、硼-自间隙团簇(BICs)演化以及缺陷与载流子相互作用等物理过程。模拟得到与实验一致的硼浓度深度分布。结果表明:BICs对硼浓度的深度分布起主要作用,而间隙硼(BI)导致硼浓度分布向深处扩展;计及缺陷的不同电荷态修正自间隙(I)和硼间隙(BI)的扩散系数,从而更准确地描述硼浓度分布。模型揭示了硼离子注入硅发生的物理过程和微观机理,证明BICs和缺陷真实的电荷态是描述硼浓度分布的重要因素,为半导体器件制造与研发提供理论指导。 相似文献
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