水分对高静压处理不同类型淀粉微观结构的影响

利用高静压(HHP)作为物理变性方法处理糯玉米淀粉和木薯淀粉,考察水分含量对不同类型淀粉的糊化及重结晶的影响。用偏光显微镜、扫描电子显微镜观测HHP处理后淀粉颗粒的形态变化,利用激光粒度分析仪记录淀粉颗粒的粒度分布及变化规律,结合X射线衍射曲线及低场核磁共振图谱,分析淀粉颗粒内水分的结合方式及程度。结果表明:当粉水比(淀粉质量和水质量之比)为3/10~5/10时,在HHP处理下,两种淀粉均发生结晶解体和溶胀现象。糯玉米淀粉的重结晶程度顺序为4/10粉水比3/10粉水比5/10粉水比;木薯淀粉颗粒结晶结构完全消失,结晶破坏的程度是3/10粉水比4/10粉水比5/10粉水比。随着水分含量增大,糯玉米淀粉及木薯淀粉的粒度逐渐增大。干燥后淀粉中的水分主要以结合水的形式存在,且水分参与结晶结构的形成。     

高静压物理变性处理糯玉米淀粉的糊化及重结晶机理研究

采用高静压技术(HHP)作为物理变性方法处理糯玉米淀粉,考察高静压力对糯玉米淀粉糊化及重结晶的影响。采用偏光显微镜及扫描电子显微镜观测处理后的淀粉颗粒的形态变化,激光粒度分析仪用于记录淀粉颗粒的粒度分布及变化规律;利用红外光谱技术分析可能发生的微观二级结构变化,结合X射线衍射曲线及DSC差热分析曲线,验证淀粉颗粒内部结构的变化。结果表明:300MPa的高静压对淀粉具有压缩作用,使其粒度减小,结晶度提高,起始糊化温度、糊化焓值增加;450MPa高静压处理后,淀粉的结晶结构几乎完全被破坏,糊化度达到95%,膨胀度为57.07%,并以此验证了HHP处理会导致淀粉颗粒发生有限膨胀;600MPa高静压处理后,淀粉颗粒发生重结晶现象,表现为典型的多峰、宽峰DSC曲线,结晶度增加。综合本研究及其他研究成果,提出"3个发展阶段"的HHP对糯玉米淀粉颗粒微观结构变化的新机制,包括:颗粒被压缩、内部结晶结构解体及颗粒解体并重新排序阶段。     

Probing Structure,Thermochemistry, Electron Affinity and Magnetic Moment of Dysprosium-doped Silicon Clusters DySi_n(n = 3～10) and Their Anions with Double-hybrid Density Functional Theory

The equilibrium geometries, electronic structures and electronic properties including adiabatic electron affinity(AEA), vertical detachment energy(VDE), simulated photoelectron spectroscopy, HOMO-LUMO gap, charge transfer, and magnetic moment for DySi_n(n = 3~10) clusters and their anions were systematically investigated by using the ABCluster global search technique combined with the B3 LYP and B2 PLYP density functional methods. The results showed that the lowest energy structure of neutral DySi_n(n = 3~10) can be regarded as substituting a Si atom of the ground state structure of Si_(n+1) with a Dy atom. For anions, the extra electron effect on the structure is significant. Starting from n = 6, the lowest energy structures of DySi_n~?(n = 3~10) differ from those of neutral. The ground state is quintuplet electronic state for DySi_n(n = 3~10) excluding DySi_4 and DySi_9, which is a septet electronic state. For anions, the ground state is a sextuplet electronic state. The reliable AEA and VDE of DySi_n(n = 3~10) are reported. Analyses of HOMO-LUMO gaps indicated that doping Dy atom to silicon clusters can improve significantly their photochemical reactivity, especially for DySi_9. Analyses of NPA revealed that the 4 f electrons of Dy in DySi_4, DySi_9, and DySi_n~? with n = 4 and 6~10 participate in bonding. That is, DySi_nbelongs to the AB type. The 4 f electrons of Dy atom provide substantially the total magnetic moments for DySi_n and their anions. The dissociation energies of Ln(Ln = Pr, Sm, Eu, Gd, Ho, and Dy) fromLn Sin and their anions were evaluated to examine the relative stabilities.