Effects of spacer layers on magnetic properties and exchange couplings of Nd-Fe-B/Nd-Ce-Fe-B multilayer films

The influences of the spacer-layer Ta on the structures and magnetic properties of Nd Fe B/Nd Ce Fe B multilayer films are investigated via DC sputtering under an Ar pressure of 1.2 Pa. An obvious(00l) texture of the hard phase is observed in each of the films, which indicates that the main phase of the film does not significantly change with Ta spacer-layer thickness. As a result, both the remanence and the saturation magnetization of the magnet first increase and then decrease,and the maximum values of 4πM_r and H_(cj) are 10.4 k Gs(1 Gs = 10_(-4)T) and 15.0 kOe(1 Oe = 79.5775 A·m_(-1)) for the film with a 2-nm-thick Ta spacer-layer, respectively, where the crystalline structures are columnar shape particles. The measured relationship between irreversible portion D(H) =-?M_(irr)/2 M_r and H indicates that the nucleation field of the film decreases with spacer layer thickness increasing, owing to slightly disordered grains near the interface between different magnetic layers.     

Nd-Ce-Fe-B纳米复合薄膜的磁性及交换耦合作用

采用磁控溅射技术制备了具有永磁特征的Nd-Ce-Fe-B多层纳米复合薄膜,并对其进行了退火处理.通过改变退火温度,研究其对薄膜磁性能和晶体结构的影响.结果表明,随着退火温度的提高薄膜磁性能逐渐增大,但当温度达到695℃以上时,薄膜的磁性能急剧下降.当退火温度为675℃时,薄膜的矫顽力Hci=10.1 kOe(1Oe=79.5775 A/m),垂直于薄膜表面方向的剩余磁化强度4πM_(r⊥)=5.91 kG(1 G=10~3/(4π)A/m).薄膜的X射线衍射结果表明,磁性薄膜具有较好的c轴取向.通过对薄膜磁化反转过程的研究,发现随着外加磁场的增大,M_(rev)的极小值向M_(irr)减小的方向移动,这与畴壁弯曲模型类似,表明在薄膜中存在较强烈的局部钉扎作用,而剩余磁化强度曲线表明这种钉扎作用在薄膜矫顽力机制中并不占支配作用.此外,薄膜的Henkel曲线结果表明在薄膜中存在较强的交换耦合作用,在经过685℃退火的薄膜中磁相互作用更加显著.