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This paper reports the induced growth of high quality ZnO thin film
by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by
solid-state pyrolytic reaction, then by taking crystallized
amorphous ZnO as seeds (buffer layer), ZnO thin films have been
grown in diethyene glycol solution of zinc acetate at 80℃. X-ray
Diffraction curve indicates that the films were preferentially
oriented [001] out-of-plane direction of the ZnO. Atomic force
microscopy and scanning electron microscopy were used to evaluate
the surface morphology of the ZnO thin film. Photoluminescence
spectrum exhibits a strong ultraviolet emission while the visible
emission is very weak. The results indicate that high quality ZnO
thin film was obtained. 相似文献
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ZnO是一种新型宽禁带直接带隙Ⅱ-Ⅵ族半导体材料,室温激子束缚能高达60meV,远大于室温热离化能(26meV),因此ZnO是适于室温或更高温度下使用的高效紫外光电材料。ZnO半导体量子点材料与体材料相比具有崭新的光电特性,特别在紫外激光器件方面,与ZnO的激子特性密切相关,因此理论上对ZnO量子点中激子的基态特性进行研究就显得十分必要。采用有效质量近似(EMA)方法,提出新的比较简单的尝试波函数,对ZnO量子点中激子的基态特性进行了计算。计算结果与实验结果基本吻合,说明我们的计算结果比较真实、有效。对变分参数Ke、Kh,归一化常数Ne、Nh以及波函数ψ随粒径变化关系进行了计算。计算结果表明,当量子点半径较小(r≤4.0aB)时,激子的波函数ψ变化非常迅速,而由于此时量子点具有很大的比表面积,因此量子点所处的环境、体内的缺陷、杂质会对其产生非常强烈的影响,同时其表面(界面)的介质会对其基态特性产生影响,因此对量子点进行有效的修饰与掺杂以减少其表面缺陷及表面悬键,减少无辐射复合与界面发射是非常必要的。 相似文献
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