A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology

A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 μm 2P4M salieide complementary metal-oxide-semiconduetor （CMOS） technology. Partially overlapping p^＋ and n^＋ regions with a salicide block layer are employed in this device to constitute a heavily doped p^＋-n^＋ junction which has soft ＂knee＂ Zener breakdown characteristics, thus its working voltage can be reduced preferably below 5 V, and at the same time the power efficiency is improved. The spectra of this device are spread over 500nm to 1000nm with the main peak at about 722nm and an obvious red shift of the spectra peak is observed with the increasing current through the device. During the emission process, field emission rather than avalanche process plays a major role. Differences between low-voltage Zener breakdown emission and high-voltage avalanche breakdown emission performance are observed and compared.     

稀土双掺发光材料的制备与发光性能

采用溶胶-凝胶法合成了系列Li_2Eu_(4-x)(MoO_4)_7:xYb~(3+)红色荧光粉。研究结果表明Li_2Eu_(3.76)Yb_(0.24)(MoO_4)7在615 nm处发出的红光明显强于未掺杂第二稀土的Li_2Eu_4(MoO_4)_7荧光粉。Yb~(3+)离子掺杂能够将吸收的能量很好地传递给激活离子Eu~(3+),从而起到能量传递的作用。该系列荧光粉可被395 nm的近紫外光和465 nm的可见光有效激发,在615 nm处发射亮红光,对应于Eu~(3+)的~5D_0→~7F_2跃迁,其色度优于商用红粉Y_2O_2S:Eu~(2+),能够用于紫外光和蓝光芯片激发的白光LED用红色荧光粉。     

Low threshold voltage light-emitting diode in silicon-based standard CMOS technology

Low-voltage silicon(Si)-based light-emitting diode(LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor(CMOS) technology.The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration.The device size of low-voltage LED is 45.85×38.4(μm),threshold voltage is 2.2 V in common condition,and temperature is 27 ℃.The external quantum efficiency is about 10-6 at stable operating state of 5 V and 177 mA.     

Motion-compensated interpolation for face-centered-orthorhombic sampled video sequence

Face-centered orthorhombic (FCO) sampling can be implemented more easily on CMOS image sensors than on other video acquisition devices. The sampling efficiency of FCO is the highest among all threedimensional (3D) sampling schemes. However, interpolation of FCO-sampled data is inevitable in bridging human perception and machine-vision algorithms. In this letter, the concept of motion compensation is borrowed from deinterlacing, which displays interlaced videos on progressively scanned devices. The combination of motion estimation based on intrafield interpolated frames and motion-compensated interfieldinterpolation is found to provide the best performance by evaluating different combinations of motion estimation and interpolation.