TiO_2/石墨烯/Ag复合结构SERS实验

基于氧化物半导体的光催化特性,能够降解有机物分子,使表面增强拉曼散射基底得以重复使用。提出了银纳米颗粒有效修饰覆盖有石墨烯的二氧化钛纳米棒阵列(TiO_2/石墨烯/Ag)复合结构作为表面增强拉曼散射基底,并对其进行了实验研究。利用水热法制备了二氧化钛纳米棒阵列;采用湿法转移石墨烯和光照还原方法制备了TiO_2/石墨烯/Ag复合结构。用罗丹明6G(R6G)分子作为探测分子,结果表明:随着紫外光照沉积时间增加,探针分子的拉曼信号先增强后减弱;计算得到最大增强因子值约为2.6×106。此外,还对TiO_2/石墨烯/Ag复合结构的紫外自清洁特性进行了初步实验,结果表明,紫外光照射20min后,其拉曼强度下降到42.3%,具有一定的紫外清洁效果。     

The 2D InSe/WS_2 Heterostructure with Enhanced Optoelectronic Performance in the Visible Region

Two-dimensional(2D)InSe and WS_2 exhibit promising characteristics for optoelectronic applications.However,they both have poor absorption of visible light due to wide bandgaps:2D InSe has high electron mobility but low hole mobility,while 2D WS_2 is on the contrary.We propose a 2D heterostructure composed of their monolayers as a solution to both problems.Our first-principles calculations show that the heterostructure has a type-Ⅱband alignment as expected.Consequently,the bandgap of the heterostructure is reduced to 2.19 eV,which is much smaller than those of the monolayers.The reduction in bandgap leads to a considerable enhancement of the visible-light absorption,such as about fivefold(threefold)increase in comparison to monolayer InSe(WS_2)at the wavelength of 490 nm.Meanwhile,the type-Ⅱ band alignment also facilitates the spatial separation of photogenerated electron-hole pairs;i.e.,electrons(holes)reside preferably in the InSe(WS_2)layer.As a result,the two layers complement each other in carrier mobilities of the heterostructure:the photogenerated electrons and holes inherit the large mobilities from the InSe and WS_2 monolayers,respectively.