Modulation of the phase difference between polarization modes in single-mode fibers

Mechanisms of polarization modulation in a single-mode fiber that modulate the phase difference between polarization modes without affecting their amplitudes are considered. A coefficient that characterizes the efficiency of cylindrical piezoceramic modulators and is independent of their resonant properties is introduced. Analytical expressions for this coefficient for different modulation mechanisms are derived. The lateral pressure on the fiber is shown to provide the highest efficiency. For isotropic fibers, a modulator with a squeezing covering, which increases significantly its efficiency, is studied. For anisotropic fibers, the most appropriate way of phase difference modulation is longitudinal extension, in which case the birefringence axes do not have to be matched. In most cases, the measured and predicted efficiencies are in good correspondence.     

Production of Semiconducting III–V Single Crystals: Current Status and Outlook

The current status of and outlook for the worldwide production of semiconducting III–V single crystals, primarily gallium arsenide, are examined. Particular emphasis is placed on improving production technologies and reaching head positions in the vertical crystallization technology.     

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

The relation between the density of etch pits revealed in GaN by etching in a KOH/NaOH eutectic and the density of dislocations determined by transmission electron microscopy (TEM) is studied along with the relation between the density of dislocations and the density of dark spot defects observed in GaN by microcathodoluminescence (MCL) and electron-beam-induced current (EBIC). It is demonstrated that selective etching is a reliable rapid method for the determination of the type and density of dislocations in GaN in the range 10⁶–10⁸ cm^?2, while MCL and EBIC can be used for the rapid nondestructive determination of the density of dislocations in the range 10⁶–10⁸ cm^?2. It is also found that some deep electron and hole traps are related to dislocations.     

Stochastic Arithmetic: s-spaces and Some Applications

It has been recently shown that computation with stochastic numbers as regard to addition and multiplication by scalars can be reduced to computation in familiar vector spaces. In this work we show how this can be used for the algebraic solution of linear systems of equations with stochastic right-hand sides. On several examples we compare the algebraic solution with the simulated solution using the CADNA package.     

Theoretische Betrachtung der Diels-Alderschen Reaktion auf Grund der LCAO-MO-Theorie

Zusammenfassung Vorliegende Arbeit bietet eine theoretische Betrachtung derDiels-Alderschen Reaktion mit Hilfe der LCAO-MO-Methode in derHückelschen Näherung unter der grundsätzlichen Voraussetzung der dem aktiven Komplex vorausgehenden -Komplexbildung zwischen dem Dien und Dienophil. Die als Resultat der Wechselwirkung zwischen Dien und Dienophil auftretende, im Bereich des Energieminimums berechnete Delokalisationsenergie steht in linearer Korrelation zur Aktivierungsenergie.Am Beispiel der Wechselwirkung des Cyclopentadiens mit unterschiedlichen Dienophilen wird gezeigt, daß die Delokalisationsenergie inendo-Stellung des Diens und Dienophils stets kleiner ist als inexo-Stellung, was den Satz vonAlder erklärt.

---

TheDiels-Alders reaction has been studied theoretically using the conventionalHückel LCAO-MO method. The investigation is based on regarding the formation of a -complex from the diene and dienophil as a forerunner of the transition state. A linear correlation exists between the energy of delocalization resulting from the diene—dienophil interaction and calculated for the region of the energy minimum and the energy of activation. The interaction of cyclopentadiene with various dienophils is used as an example showing that the delocalization energy of theendo situated diene and dienophil is always lower than the delocalization energy of theexo oriented ones, a fact that explainsAlders rule.

---

---

Mit 5 Abbildungen