Three-weight linear codes from Weil sums

Journal of Algebraic Combinatorics - By appropriately choosing a defining set, we define a class of linear codes and establish their complete weight enumerators and weight enumerators using Weil...     

Weight enumerators of reducible cyclic codes and their dual codes

Let ${\mathbb{F}}_q$ be a finite field and $n$ a positive integer. In this paper, we find a new combinatorial method to determine weight enumerators of reducible cyclic codes and their dual codes of length $n$ over ${\mathbb{F}}_q$, which just generalize results of Zhu et al. (2015); especially, we also give the weight enumerator of a cyclic code, which is viewed as a partial Melas code. Furthermore, weight enumerators obtained in this paper are all in the form of power of a polynomial.     

Complete weight enumerators of a family of three-weight linear codes

Linear codes have been an interesting topic in both theory and practice for many years. In this paper, for an odd prime p, we present the explicit complete weight enumerator of a family of p-ary linear codes constructed with defining set. The weight enumerator is an immediate result of the complete weight enumerator, which shows that the codes proposed in this paper are three-weight linear codes. Additionally, all nonzero codewords are minimal and thus they are suitable for secret sharing.     

三维周期结构弱无条件稳定时域有限差分算法

从麦克斯韦方程出发,导出了适用于周期结构的三维弱无条件稳定时域有限差分（FDTD）算法的迭代式,在理论上证明了其稳定性条件,其稳定性条件比普通FDTD的稳定性条件要宽松,并将周期边界条件应用到迭代式中,得到了可直接编程迭代的方程,给出了对其特有的一类非三对角阵的解决办法。最后通过算例将计算结果与常规FDTD及ADI-FDTD计算结果比较,验证了算法的精确性和有效性。     

Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting

We fabricated sulfur-doped black silicon by metal-assist chemical etching (MCE) and ion implanting. The morphologies of silicon nanowire (SiNW) arrays and the concentration of sulfur in black silicon were analyzed by scanning electron microscope (SEM). Sulfur-doped black silicon shows higher absorption in entire 0.3–2.5 μm wavelength range as compared to undoped SiNW arrays and flat silicon. The changes in the absorption spectra of black silicon with different etching durations and annealing temperature are also shown. Upon annealing, the absorption decreases significantly in 2–2.5 μm wavelength region. The novel results clearly indicate that sulfur implanting could produce below band gap absorption in the silicon substrate.     

Diode-pumped passively Q-switched and mode-locked Nd:YLF laser with Cr4+:YAG saturable absorber

A diode-pumped passively Q-switched Nd:YLF laser was demonstrated by using saturable absorber of Cr4+:YAG. At the incident power of 7.74 W, pure passively Q-switched laser with per pulse energy of 210 Μj and pulse width of 19.6 ns at repetition rate of 1.78 kHz was obtained by using Cr4+:YAG with initial transmission of 80%. At the incident power of 8.70 W, a Q-switched mode-locking with average output power of 650 Mw was achieved, the overall slop efficiency was 16%, corresponding to the initial transmission of 85% of Cr4+ :YAG.     

An efficient intracavity-pumped KTP optical parametric oscillator at 1572 nm

We demonstrate an efficient and eye-safe wavelength intracavity optical parametric oscillator (OPO),based on a KTP crystal inside a Q-switched Nd:YVO4 laser end pumped by a fiber-coupled diode laser. Inthe acousto-optic Q-switched operation with the pulse repetition rate of 10 kHz, a 1572-nm eye-safe laser with the average power of 237 mW at the incident pump power of 5.64 W is obtained. Under the pulse repetition rate of 5 kHz, the signal light with pulse width of 2 ns and peak power of 18.5 kW is achieved.The conversion efficiency of the average power is 4.2% from pump diode to OPO signal output and thesignal pulse duration is about 13 times shorter than that of the depleted pump light.