Diffusion of a low-soluble impurity in a solid matrix

An analytical expression for the concentration profile of a low-soluble diffusant in a sample is derived for a high-capacity diffusion source. The model is checked by determining the diffusion coefficient of yttrium in beryllium.     

HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e‐beam

We show that HfO₂/AlGaN/GaN structures with HfO₂ layer deposited using an e‐beam in ultra high vacuum are suitable for field effect transistors. The dielectric constant of the HfO₂ was found ε_HfO > 23–24, which is close to the highest re‐ ported values for this material. The leakage current did not exceed 10^–4 A/cm² at the threshold voltage. The comparison of the losses in the samples with and without HfO₂ indicates low concentration of the interface traps. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The stability of the equilibrium of holonomic conservative systems

The problem of the stability of the equilibrium positions and steady motions of holonomic conservative systems has been fairly completely treated in a number of reviews [44,58,9]. However, investigations are continuing in this field and a number of new important results have recently been obtained (in 1982–1992). This review analyses these results and compares them with previous ones.     

Physical and chemical properties of silicon carbonitride nanocrystalline films

Nanocrystalline transparent films SiC_xN_y were obtained by plasma-enhanced chemical deposition within the temperature range 473–1173 K from low pressure gas phase from a mixture of hexamethyldisilazane vapor, ammonia, and helium. Physical chemical properties of the films obtained were studied by IR and Raman spectroscopy, ellipsometry, X-ray photoelectron spectroscopy, scanning electron microscopy, high resolution transmission electron spectroscopy and synchrotron radiation powder diffaction. Voltage-capacity and voltage-current measurements were also made. The dependence of chemical and phase composition of the films on deposition conditions was determined, and the formation of approximately 2 nm sized spherical nanocrystals within the films was established. The nanocrystals are formed by a phase similar to usual α-Si₃N₄, with silicon atoms partially substituted by carbon ones.     

Activity and selectivity of iron–molybdenum catalysts in synthesis of formaldehyde in an industrial installation

The results of operation of F-1 and F-2 iron–molybdenum formaldehyde synthesis catalysts in an industrial installation consisting of two series-connected tubular reactor are analyzed. The physicochemical properties of the catalysts were studied, and the relationship between the characteristics of acid–base sites, on the one hand, and the activity and selectivity, on the other hand, was determined. The formation of hydrogen on the industrial catalysts is improbable.     

Boron Dipirrins: Mechanism of Formation,Spectral and Photophysical Properties,and Directions of Functionalization

Russian Journal of General Chemistry - Boron dipyrrins (Bodipy) are unique complexes occupying an intermediate position between classical coordination and organometallic compounds. The enormous...