Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer

Physics of the Solid State - The growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces is investigated by scanning tunneling microscopy (STM). It is shown that the...     

On estimates of approximation characteristics of the Besov classes of periodic functions of many variables

We obtain order estimates for some approximate characteristics of the Besov classes B _p,ϑ ^r of periodic functions of many variables. Institute of Mathematics, Ukrainian Academy of Sciences, Kiev. Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 49, No. 9, pp. 1250–1261, September, 1997.     

On Kolmogorov widths of classesB p,θ r of periodic functions of many variables with low smoothness in the spacel q

We study the Kolmogorov widths of Besov classesB _p, ^r of periodic functions of many variables with low smoothness in the spaceLq, 1相似文献   

Light emission from nanocrystalline silicon clusters embedded in silicon dioxide: Role of the suboxide states

Silicon clusters embedded in a silicon dioxide matrix were prepared by ultrasound-assisted implantation resulting in a modified concentration of suboxide states as revealed by high-resolution photoelectron spectroscopy. It is suggested that ultrasound treatment results in formation of different interface structure between silicon cluster and silicon dioxide matrix which is characterized by a distinctly reduced concentration of the suboxide states. It is observed that photoluminescence properties are strongly correlated with the concentration of the suboxide states thereby providing an evidence that besides a quantum confinement effect a closer look at the chemical composition of the nc-Si/SiO₂ system is important.     

Linear Widths of the Besov Classes of Periodic Functions of Many Variables. II

We obtain order estimates for linear widths of the Besov classes of periodic functions of many variables in the space L _q for certain values of parameters p and q different from those considered in the first part of the work.     

Averaging of differential equations with Perron-integrable right-hand side

We consider a generalization of the Bogolyubov theorem to differential equations with Perron-integrable right-hand side. Translated from Neliniini Kolyvannya, Vol. 11, No. 3, pp. 387–395, July–September, 2008.     

Structural state of Ge/Si heterosystems with (001), (111), and (7 7 10) interfaces

It is shown for (111) and (001) interfaces that at an identical degree of strain relaxation in semi-conductor epitaxial films, the ratio of distances D between neighboring dislocations is D ₍₁₁₁₎/D ₍₀₀₁₎ = 1.5. This allows us to establish that dislocation interface (7 7 10) contains partial 90° Shockley dislocations lying in three directions of 〈110〉.