Asymptotic expansion of the logistic midrange

Using the symbolic computation program MAPLE, we compute several terms of an asymptotic expansion for the distribution function of the logistic midrange.     

Exploring Little Higgs models with ATLAS at the LHC-

The European Physical Journal C - We discuss possible searches for the new particles predicted by Little Higgs Models at the LHC. By using a simulation of the ATLAS detector, we demonstrate how the...     

Knowing and Teaching Middle School Mathematics: A Professional Development Course for In‐Service Teachers

This article describes a professional development course intended to improve the content understanding of middle school mathematics teachers. The design of the course included three professional learning strategies: problem solving, examination of student thinking, and discussion of research. The concepts studied in the course included multi‐digit subtraction, multi‐digit multiplication, operations with fractions, and concepts of area and perimeter. Results from pre‐ and post‐tests administered to the nineteen participants indicate a significant increase in the mean score for each concept and document growth in the teachers' content understanding. In particular, their solutions moved from primarily procedural to more conceptual. Responses to an open‐ended survey indicate other important aspects of the professional development. Examples of teachers' work and comments are included.     

Straightforward conversion of alcohols into dibenzenesulfonimides

The reaction of various alcohols with N-fluorodibenzenesulfonimide and triphenylphosphine leads to the corresponding dibenzenesulfonylated amines in high yields.     

Extended X-ray absorption fine structure studies of thulium doped GaN epilayers

The local structure of Tm³⁺ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3×10¹⁵, 4×10¹⁵ cm⁻² and 5×10¹⁵ cm⁻². The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.     

Growth and characterisation of Eu doped GaN thin films

We have studied the optical properties of Eu doped GaN thin films. We have grown high quality Eu doped GaN thin films by using Gas Source Molecular Beam Epitaxy (GSMBE), with 1.4% Eu concentration. The Full Width at Half Maximum (FWHM) of the X-ray diffraction in an omega scan was found to be 288 arcsecs. Low Eu concentration (0.08%) doped GaN thin films were grown, where Eu-related photoluminescence at 622 and 613 nm was detected using above band-gap excitation at 2 K. For high Eu concentration of 30% GaN:Eu crystal photoluminescence (PL) and cathodoluminescence (CL) spectra show strong and intense transitions at 622 and 664 nm, but also at 593 nm for CL spectra, with a similar transition observed from the low Eu concentration sample.     

Simultaneous observation of coherent and incoherent resonant re-emission in the condensed phase

We report simultaneous observation of coherent resonance Raman scattering and incoherently broadened resonance fluorescence following excitation of cytochrome c in the α(0, 0) region. The influence of incoherent broadening processes on resonance Raman scattering experiments is considered.     

Concise synthesis of anhydrovinblastine from leurosine

[reaction: see text] The Cp(2)TiCl-mediated deoxygenation of leurosine (1) afforded anhydrovinblastine (4) in good yield. Furthermore, as the reaction proceeded via a carbon-centered radical intermediate, this transient was also trapped by a hydrogen-atom donor to afford selectively reduced alkaloid 10.     

Energy isosbestic points in third-row transition metal alloys

The total electronic energies of the six electrons per atom (e per atom) alloys W, TaRe, HfOs, and YIr and the seven electrons per atom alloys Re, WOs, TaIr, HfPt, and YAu have been calculated in the local density approximation of density functional theory. When one considers common alloy structures such as atomically ordered variants of the body-centered cubic, face-centered cubic, or hexagonally closest packed structures and plots the total electronic energy as a function of the unit cell parameter, one finds for both the six and seven electrons per atom series energetic isosbestic points. An energetic isosbestic point corresponds to a critical value of the size parameter for which all members of the 6 or 7 e per atom series of compounds have nearly identical total electronic energy. Just as in spectroscopy, where the existence of such isosbestic points is the hallmark of two compounds present in the mixture, an energy isosbestic point implies there are just two separate energy curves. For both series it is found that the total electronic energy can be viewed as the weighted sum of a purely covalent term and a purely ionic term. Two semi-quantitative models are proposed to account for these two separate energies. In the first model the total energy is viewed as the sum of the elemental structural energy plus an ionic energy based on the Born-Mayer ionic model. In the second model one considers within the confines of mu2-Hückel theory the evolution of the total electronic energy as the Coulombic Hii integrals change in value.     

Chiral discrimination within disordered adlayers on metal surfaces

Using a novel non-linear optical technique enantiomeric excess within a translationally disordered overlayer on a metal surface has been monitored for the first time.