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针对测量单边缺口拉伸(SENT)试样的裂纹尖端张口位移(CTOD)阻力曲线时,延性裂纹扩展量的计算过于复杂的问题,提出了一种由数字图像相关技术(DIC)计算的变形场来确定裂纹尖端位置,并快速推算延性裂纹扩展量的方法。该方法首先在缺口和裂纹上下方的弹性区域设置两条平行横线;然后通过两条横线间的位移差构建曲线,曲线变化幅度的临界点即为裂纹端部的位置;根据临界点位置计算裂纹扩展量,最后测量CTOD并构建阻力曲线。将本文方法与另一种通过DIC测量SENT试样CTOD阻力曲线的方法进行对比,结果表明本文方法经过简便的计算后拟合的阻力曲线效果更好。 相似文献
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Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field 下载免费PDF全文
We examined the wake-up effect in a TiN/Hf0.4Zr0.6O2/TiN structure. The increased polarization was affected by the cumulative duration of a switched electric field and the single application time of the field during each switching cycle. The space-charge-limited current was stable, indicating that the trap density did not change during the wake-up. The effective charge density in the space-charge region was extracted from capacitance-voltage curves, which demonstrated an increase in free charges at the interface. Based on changing characteristics in these properties, the wake-up effect can be attributed to the redistribution of oxygen vacancies under the electric field. 相似文献
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