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We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.  相似文献   
3.
Transparent nanocrystalline films of oxide semiconductors such as TiO2 and Fe2O3 have been prepared on a conducting glass support employing a sol-gel procedure. The films are composed of nanometer-sized particles sintered together to allow for percolative charge carrier transport. The internal surface of these films is very high, roughness factors of the order of 1000 being readily obtained. Electric polarization was applied for forward and reverse biasing of the films and the resulting optical changes have been analyzed to derive their flat band potential. Band gap excitation of such nanocrystalline semiconductors produces electron-hole pairs which migrate through the film to be collected as electric current. Steady state photolysis and time resolved laser techniques have been applied to scrutinize the mechanism of light induced charge separation within the nanostructure. When derivatized with a suitable chromophore, TiO2 films give extraordinary efficiencies for the conversion of incident photons into electric current, exceeding 90% for certain transition metal complexes within the wavelength range of their absorption band. The underlying physical principles of these astonishing findings will be discussed. Exploiting this discovery, we have developed a new type of photovoltaic device whose overall light to electric energy conversion yield is 10% under simulated AM 1.5 solar radiation.  相似文献   
4.
Light-induced interfacial electron transfer from two p-InP electrodes differing in the amount of majority carrier doping to a number of electron relays ( R ) dissolved in aqueous solution was investigated. The material with the lower carrier density (0.71 × 1018 cm?3) exhibited much better wavelength response and quantum yield for electron transfer than the electrode doped with 2.3 × 1018 cm?3 charge carriers. Using cobalt (III) sepulcrate, Co (sep)3+, as an electron relay a polychromatic light to electrical energy conversion efficiency of 18% was obtained. The potential of this relay for use in a regenerative photoelectrochemical cell is briefly discussed.  相似文献   
5.
A series of new cobalt complexes [Co(LLL)(2)X(2)] were synthesized and evaluated as redox mediators for dye-sensitized nanocrystalline TiO(2) solar cells. The structure of the ligand and the nature of the counterions were found to influence the photovoltaic performance. The one-electron-transfer redox mediator [Co(dbbip)(2)](ClO(4))(2) (dbbip = 2,6-bis(1'-butylbenzimidazol-2'-yl)pyridine) performed best among the compounds investigated. Photovoltaic cells incorporating this redox mediator yielded incident photon-to-current conversion efficiencies (IPCE) of up to 80%. The overall yield of light-to-electric power conversion reached 8 % under simulated AM1.5 sunlight at 100 W m(-2) intensity and more than 4% at 1000 W m(-2). Photoelectrodes coated with a 2 microm thick nanoporous layer and a 4 microm thick light-scattering layer, sensitized with a hydrophobic ruthenium dye, gave the best results.  相似文献   
6.
The hydrolysis of niobium pentaethoxide precursor in the presence of triethylamine (TEA) is discussed. Three precursors with TEA/Nb(OEt)5 mole ratios of 0.25, 0.4 and 0.8 were prepared. Niobia colloids with different appearance were obtained after autoclaving the above precursors at 250°C during 12 h. The surface roughness and microstructure of niobia films prepared with the colloids by spread coating method are strongly dependent on the TEA/Nb(OEt)5 mole ratio. At a value of 0.4 TEA/Nb(OEt)5 mole ratio, a niobia film with large surface roughness can be achieved. It is opaque and mechanically stable and has differently ordered needle microstructure. The crystalline structure and photoelectrochemical property of niobia film with the largest surface roughness were examined. The effect of CO2 gas bubbling, reflux and addition of 2-methoxyethanol on the hydrolysis of Nb(OEt)5 and the nature of the Nb2O5 films is also discussed.  相似文献   
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We report on cross surface ambipolar charge percolation within a monolayer of a molecular triad adsorbed on semiconducting or insulating mesoscopic metal oxide films. The triad consists of a triphenlyamine (TPA) donor and a perylenemonoimide (PMI) acceptor connected by a bithiophene (T2) bridge. The self-assembled PMI-T2-TPA monolayer exhibits p-type or n-type conduction depending on the potential that is applied to the conducting glass (FTO) electrode supporting the oxide films. Cross surface electron transfer is turned on at around -1.24 V (vs Fc+/Fc) where the PMI moiety is electroactive. The color of the film changes from red to blue during the reduction of the PMI. By contrast, lateral hole transfer is turned on at around 0.8 V (vs Fc+/Fc) where the TPA moiety becomes electroactive. The stepwise oxidation of the T2-TPA units at 0.79 and 1.28 V (vs Fc+/Fc) is associated with a color change of the film from red to black. Cyclic voltammetric as well as chronocoulometric and spectroelectrochemical measurements were applied to determine the percolation threshold for cross surface charge transfer and the diffusion coefficients for the electron and hole hopping process. The effect of oxide surface states on the lateral charge motion was also investigated.  相似文献   
9.
Conduction band electrons produced by band gap excitation of TiO2-particles reduce efficiently thiosulfate to sulfide and sulfite. \documentclass{article}\pagestyle{empty}\begin{document}$ {\rm 2e}_{{\rm cb}}^ - ({\rm TiO}_{\rm 2}) + {\rm S}_{\rm 2} {\rm O}_3^{2 - } \longrightarrow {\rm S}^{2 - } + {\rm SO}_3^{2 - } $\end{document} This reaction is confirmed by electrochemical investigations with polycrystalline TiO2-electrodes. The valence band process in alkaline TiO2-dispersions involves oxidation of S2O to tetrathionate which quantitatively dismutates into sulfite and thiosulfate, the net reaction being: \documentclass{article}\pagestyle{empty}\begin{document}$ 2{\rm h}^{\rm + } ({\rm TiO}_{\rm 2}) + 0.5{\rm S}_{\rm 2} {\rm O}_{\rm 3}^{{\rm 2} - } + 1.5{\rm H}_{\rm 2} {\rm O} \longrightarrow {\rm SO}_3^{2 - } + 3{\rm H}^{\rm + } $\end{document} This photodriven disproportionation of thiosulfate into sulfide and sulfite: \documentclass{article}\pagestyle{empty}\begin{document}$ 1.5{\rm H}_{\rm 2} {\rm O } + 1.5{\rm S}_{\rm 2} {\rm O}_{\rm 3}^{{\rm 2} - } \mathop \to \limits^{h\nu} 2{\rm SO}_3^{2 - } + {\rm S}^{{\rm 2} - } + 3{\rm H}^{\rm + } $\end{document} should be of great interest for systems that photochemically split hydrogen sulfide into hydrogen and sulfur.  相似文献   
10.
Electrochemical impedance spectroscopy (EIS) has been performed to investigate electronic and ionic processes in dye-sensitized solar cells (DSC). A theoretical model has been elaborated, to interpret the frequency response of the device. The high-frequency feature is attributed to the charge transfer at the counter electrode while the response in the intermediate-frequency region is associated with the electron transport in the mesoscopic TiO2 film and the back reaction at the TiO2/electrolyte interface. The low-frequency region reflects the diffusion in the electrolyte. Using an appropriate equivalent circuit, the electron transport rate and electron lifetime in the mesoscopic film have been derived, which agree with the values derived from transient photocurrent and photovoltage measurements. The EIS measurements show that DSC performance variations under prolonged thermal aging result mainly from the decrease in the lifetime of the conduction band electron in the TiO2 film.  相似文献   
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