Composition and thermal stability of SiO2-based hybrid materials TEOS-MTEOS system

Hybrid materials with different amounts of organics permanently bound on the inorganic network obtained in the TEOS-MTEOS (tetraethoxysilan-methyltriethoxysilan) system are used for obtaining coatings with different optical and mechanical properties. To study the thermal stability of the mentioned materials, compositions with different molar ratios of the precursors were prepared. The influence of the solvent and water amounts on the gelation process was also investigated. The gels obtained were characterised by IR spectrometry and their decomposition temperatures were determined by DTA/TG. Thermal stability of the gels is rather influenced by their composition than the conditions of the gelation process. This revised version was published online in July 2006 with corrections to the Cover Date.     

Synthesis, characterization, and substitution chemistry of [Bu4N]2[W6Cl8(OSO2CF3)6]. A versatile precursor for axially substituted clusters containing the (W6Cl8)4+ core

The new cluster [Bu4N]2[W6Cl8(OSO2CF3)6] (1) has been prepared and structurally characterized. This material is an effective precursor for the generation of cluster ions with the general formula [W6C18L6]n (L = Cl-, Br-, I-, NCS-, NCO-, NCSe-, and O=PPh3; n = 2- or 4+). The last three clusters are new. The products have been characterized by IR spectroscopy, NMR spectroscopy, and FAB mass spectrometry. In addition to 1, the products [Bu4N]2[W6C18(NCS)6] (5) and [Bu4N]2[W6C18(NCO)6] (7) were structurally characterized. Crystal data for 1: space group, P2(1/c) (No. 14); a = 11.116(5) A; b = 27.952(1) A; c = 24.516(1) A; beta = 95.182(9) degrees; V = 7586.3(5) A3; Z = 4. Crystal data for 5: space group, P2(1/n) (No. 14); a = 11.3323(9) A; b = 12.3404(9) A; c = 44.583(3) A; beta = 97.089(1) degrees ; V = 6187.1(7) A3; Z = 4. Crystal data for 7: space group, P1 (No. 2); a = 11.8009(8) A; b = 11.9332(8) A; c = 11.9522(8) A; alpha = 77.904(1) degrees; beta = 95.182(9) degrees; gamma = 62.574(1) degrees V = 1450.5(2) A3; Z = 1.     

Selective separation of uranium from other elements by cation-exchange chromatography in hydrobromic acid and hydrochloric acid-acetone mixtures

U(VI) can be separated from Ga, Fe(III), Bi, Pb, Cd, Zn, Cu(II) and Au(III) by quantitative elution with 0.50M HBr in 86% acetone or with 0.35M HBr in 90% acetone from a column of AG50W-X4 cation-exchange resin of 200-400 mesh particle size. U(VI) and many other ions are retained. U(VI) then can be eluted selectively with 0.50M HCl in 83% acetone or with 0.35M HCl in 85% acetone. Co(II), Mn(II), Mg, Ca, Ti(IV), Al, Zr, Th and La are quantitatively retained by the column. These elements then can be eluted with 5M HNO(3). At the higher acid concentration (0.50M) the separation between U(VI) and Li is not satisfactory but is excellent at the lower acid concentration; the U(VI) peak is sharper at the higher acid concentration. Separations are sharp and quantitative, as is demonstrated by results for some synthetic mixtures. Distribution coefficients and elution curves are presented.     

Radiation dose contribution from coal-slags used as structural building material

A significant dose contribution on the population could be derived from coal slags used as isolation material. Extremely high natural activities are measured in the coal slag, derived from the region of the settlement Ajka, Hungary. In some buildings monitored, the elevated -doses were nearly 5–10 times higher than the world average ones. The annual average indoor radon concentrations from the slag exceeded 400 Bq/m³ and in some cases up to 1200 Bq/m³. Due to the elevated exposure and the radon concentrations in the dwellings the annual dose was estimated to 8–24 mSv/y more than 5–10 times of the world average one.     

Origin and Location of Electrons and Protons during the Formation of Intermetalloid Clusters [Sm@Ga3−xH3−2xBi10+x]3− (x=0, 1)

Reaction of [GaBi₃]^2? with [Sm(C₅Me₄H)₃] yielded the first protonated ternary intermetalloid clusters [Sm@Ga_3?xH_3?2xBi_10+x]^3? ( 1 ; x=0,1). The presence of the Ga? H bonds and the transfer of electrons and protons during the formation of 1 were elucidated by a combination of experimental and quantum chemical methods, thereby rationalizing the role of the solvent ethane‐1,2‐diamine as a Brønsted acid. As an organic by‐product, we observed the previously unknown octamethylfulvene ( 2 ) upon C? C coupling of (C₅Me₄H)^?.     

Ligand Effects on the Electronic Structure of Heteroleptic Antimony-Centered Radicals

We report on the structures of three unprecedented heteroleptic Sb-centered radicals [L(Cl)Ga](R)Sb^. ( 2-R , R=B[N(Dip)CH]₂ 2-B , 2,6-Mes₂C₆H₃ 2-C , N(SiMe₃)Dip 2-N ) stabilized by one electropositive metal fragment [L(Cl)Ga] (L=HC[C(Me)N(Dip)]₂, Dip=2,6-i-Pr₂C₆H₃) and one bulky B- ( 2-B ), C- ( 2-C ), or N-based ( 2-N ) substituent. Compounds 2-R are predominantly metal-centered radicals. Their electronic properties are largely influenced by the electronic nature of the ligands R, and significant delocalization of unpaired-spin density onto the ligands was observed in 2-B and 2-N . Cyclic voltammetry (CV) studies showed that 2-B undergoes a quasi-reversible one-electron reduction, which was confirmed by the synthesis of [K([2.2.2]crypt)][L(Cl)GaSbB[N(Dip)CH]₂] ([K([2.2.2]crypt)][ 2-B ]) containing the stibanyl anion [ 2-B ]⁻, which was shown to possess significant Sb−B multiple-bonding character.     

The Bounded Axiom A Forcing Axiom

We introduce the Bounded Axiom A Forcing Axiom (BAAFA). It turns out that it is equiconsistent with the existence of a regular ∑₂‐correct cardinal and hence also equiconsistent with BPFA. Furthermore we show that, if consistent, it does not imply the Bounded Proper Forcing Axiom (BPFA) (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electronic structure near metal-metal interfaces

A review will be given of recent calculations on metal films which give information about metal-metal interfaces. The systems discussed will include palladium on niobium, cesium on tungsten, and nickel on copper. In general it is found that the electronic structure closely resembles the bulk within one or two atomic layers of the interface. Using these methods it is possible to calculate directly the interface energy.