Occupied and Unoccupied Orbitals of C60 and C70

Abstract

The full spectrum of occupied and unoccupied σ and π orbitals is presented for solid C₆₀, C₇₀, and graphite, using Cls emission and absorption spectroscopy. There are significant diffcrences between C₆₀ and C₇₀, and even larger changes relative to their infinite analog graphite (C∝). A comparison is made with photocmission and inverse photoemission results, along with first principles quasiparticle calculations.     

Electronic Structure and Crystalline Coherence in Fe/Si Multilayers

Soft x-ray fluorescence spectroscopy has been used to examine the electronic structure of deeply buried silicide thin films that arise in Fe/Si multilayers. These systems exhibit antiferromagnetic (AF) coupling of the Fe layers, despite their lack of a noble metal spacer layer found in most GMR materials. Also, the degree of coupling is very dependent on preparation conditions, especially spacer layer thickness and growth temperature. The valence band spectra are quite different for films with different spacerlayer thickness yet are very similar for films grown at different growth temperatures. The latter result is surprising since AF coupling is strongly dependent on growth temperature. Combining near-edge x-ray absorption with the fluorescence data demonstrates that the local bonding structure in the silicide spacer layer in epitaxial films which exhibit AF coupling are metallic. These results indicate the equal roles of crystalline coherence and electronic structure in determining the magnetic properties of these systems.     

Resonant inelastic scattering in dilute magnetic semiconductors by soft X-ray fluorescence spectroscopy

1-x Mn_xS (where 0.05<x<1) were measured as the energy of the exciting radiation was tuned across the S and Mn-L_2,3 absorption edges of these compounds. Strong resonance peaks in Mn-L emission spectra and the systematic appearance of new spectral features in S-L emission spectra were observed. Partial substitution of Zn by a magnetic Mn ion results in strong hybridization of the Mn 3d orbitals with the sp band of the host semiconductor. A detailed study of resonant inelastic scattering in the vicinity of the S and Mn-L_2,3 absorption edges of these DMS is presented. Received: 6 March 1997