Structural characterization techniques for the analysis of semiconductor strained heterostructures

A combined method for structural characterization of strained epitaxial heterostructures involving different techniques such as Rutherford backscattering spectrometry (RBS), multiple crystal X-ray diffractometry (MCD) and transmission electron microscopy (TEM) is presented. In order to obtain a complete characterization of the analysed structure, three different quantities are measured independently: the epilayer thickness, the density of misfit dislocations which may appear at the interface, and the significant components of the strain tensor, mainly the tetragonal distortion, affecting the epilayer lattice. In this way the thermodynamic state and the mechanisms of plastic deformation of the structures can be fully investigated. In this contribution we present and discuss the experimental results concerning a set of InP/GaAs samples having different layer thicknesses ranging from 5 to 500 nm. The thickness of the samples has been determined by RBS. Measurements of in-plane strain and tetragonal distortion have been performed by MCD and RBS-channelling respectively, finally TEM has been used for determining the defects densities and distribution.     

The role of Mg complexes in the degradation of InGaN-based LEDs

The electrical and optical properties of commercial blue InGaN-based LEDs after room temperature aging tests at DC-forward currents from 50 to 100 mA are studied by Current–Voltage, Capacitance–Voltage, Electroluminescence and Cathodoluminescence techniques. An increase of the reverse and low-bias forward currents, of the parasitic series resistance and a substantial optical intensity reduction are observed in all the devices investigated with or without heat sink. In addition, only in devices aged at 100 mA without heat sink, the onset of a broad optical band peaked at about 3.1 eV and an apparent doping decrease of about four times, as obtained by Capacitance–Voltage measurements, are found. Temperature-dependent luminescence analyses show the quenching of the 3.1 eV band above 200 K, suggesting its donor–acceptor-pair nature. The band onset is interpreted as a result of the Mg dopant instability in the p-type layers, correlated to the device self-heating inducing junction temperature above 300 C. The band is attributed to Mg-related metastable complexes, such as Mg–H₂, acting as shallow acceptors. Due to their unstable nature, the behaviour of the 3.1 eV emission is studied under controlled electron-beam irradiation in the SEM. Its time evolution during 60 min of irradiation reveals an almost complete quenching in the Cathodoluminescence spectra, which is attributed to the dissociation of the Mg–H₂ complexes.     

Low-temperature spectrally resolved cathodoluminescence study of degradation in opto-electronic and microelectronic devices

This study reports on the microcharacterization of devices for optoelectronic and for microelectronic applications using low temperature (T = 5 and 77 K) spectrally resolved cathodoluminescence (SCL). The mechanisms leading to compositional inhomogeneities in the regrowth regions of InP-based butt-coupled laser-waveguide devices for semiconducting optical amplifiers (SOAs) and for defect generation in the active and cladding layers of GaAs based pump lasers for erbium-doped optical fibre amplifiers (EDFAs) were studied. Beryllium outdiffusion in the base regions of GaAs-based heterojunction bipolar transistors (HBTs) after bias ageing was also studied. By comparing the CL results with TEM, SIMS and HRXRD studies and with the existing literature, the observed growth and operation induced defects were attributed, respectively, to the following mechanisms: recombination-enhanced defect glide (REDG) in the pump lasers, recombination enhanced impurity diffusion (REID) in the HBTs and electrostatically induced growth flux instabilities in the butt-coupled laser-waveguide devices.     

Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE

We report on a photoreflectance investigation in the 0.8-1.5 eV photon energy range and at temperatures from 80 to 300 K on stacked layers of InAs/GaAs self-assembled quantum dots (QDs) grown by Atomic-Layer Molecular Beam Epitaxy. We observed clear and well-resolved structures, which we attribute to the optical response of different QD families. The dependence of the ground state transition energy on the number of stacked QD layers is investigated and discussed considering vertical coupling between dots of the same column. It is shown that Coulomb interaction can account for the observed optical response of QD families with different morphology coexisting in the same sample. Received 17 November 1999     

Optical and structural properties of Zn1−x Mg x O ceramic materials

This paper reports structural, optical and cathodoluminescence characterizations of sintered Zn_1?x Mg _x O composite materials. The effects of MgO composition on these film properties have been analyzed. X-ray diffraction (XRD) confirms that all composites are polycrystalline with prominent hexagonal wurtzite structure along two preferred orientations (002) and (101) for the crystallite growth. Above doping content x = 10 %, the formation of the hexagonal ZnMgO alloy phase and the segregation of the cubic MgO phase start. From reflectance and absorption measurements, we determined the band gap energy which tends to increase from 3.287 to 3.827 eV as the doping content increases. This widening of the optical band gap is explained by the Burstein–Moss effect which causes a significant increase of electron concentration (2.89 × 10¹⁸?5.19 × 10²⁰ cm^?3). The luminescent properties of the Zn_1?x Mg _x O pellets are studied by cathodoluminescence (CL) at room and liquid nitrogen temperatures under different electron beam excitations. At room temperature, the CL spectra of the Zn_1?x Mg _x O composites exhibit a dominant broad yellow-green light band at 2.38 eV and two ultraviolet emission peaks at 3.24 and 3.45 eV corresponding to the luminescence of the hexagonal ZnO and ZnMgO structures, respectively. For the doped ZnO samples, it reveals also new red peaks at 1.72 and 1.77 eV assigned to impurities’ emissions. However, the CL spectra recorded at 77 K show the presence of excitonic emission peaks related to recombination of free exciton (X _A), neutral donor-bound excitons (D⁰X) and their phonon replicas. The CL intensity and energy position of the green, red and ultraviolet emission peaks are found to depend strongly on the MgO doping content. The CL intensity of the UV and red emissions is more enhanced than the green light when the MgO content increases. CL imaging analysis shows that the repartition of the emitting centers in Zn_1?x Mg _x O composites is intimately connected to the film composition and surface morphology.     

SiC Nanostructures Toward Biomedical Applications and Its Future Challenges

The present work reviews current research activities for possible applications of silicon carbide (SiC) nanostructures. The main attention is devoted to emerging biomedical applications which can bring a boon for a healthy society. Highlights toward the widespread of SiC nanostructures in new fields of applications are reviewed and explained. This article surveys some of the recent work using SiC nanostructures in biomedical field, sensing, and energy harvesting including a review on nanostructure biocompatibility research to date.

The review article begins with an overview of the state of art of silicon carbide along with their behavior, properties, and applications of SiC in bulk, thin films, and nanoscale forms, respectively. The multidisciplinary applications of SiC nanostructures are also highlighted. Different applications elaborated are as follows: (1) biomedical/nanomedical applications, (2) nanoelectronics, (3) sensing applications, (4) energy harvesting, and (5) other emerging areas. The possibility for employing SiC nanostructures to be accomplished in upgrading the existing devices is suggested based on their properties. This article is concluded with some challenges for future applications.     

Antiphase disorder in GaAs/Ge heterostructures for solar cells

Antiphase disorder in metal organic vapour phase epitaxy grown GaAs/(100)Ge heterostructures has been studied both in as-grown materials and in GaAs solar cells by chemical etching, transmission electron microscopy, and cathodoluminescence. All the samples are single domains at the surface due to the self-annihilation of antiphase domains whose size decreases as the misorientation angle increases. Completely antiphase domain-free epitaxy has been achieved for substrate miscuts greater than 3 degrees off towards [111]. A reversal in sublattice location has been found in the GaAs layers varying the misorientation angle and the growth temperature. A model to explain this result has been proposed based on the role of surface steps in the nucleation process. Strong interaction between antiphase boundaries and misfit dislocations has been found in all the heterostructures. In solar cells antiphase domains have been observed in high densities in the initial layer of GaAs deposited on Ge. The successful realisation of high efficiency solar cells is due to the overgrowth of these domains by single phase material over most of the wafer area.     

Excitonic recombination in superstoichiometric nanocrystalline TiO2 grown by cluster precursors at room temperature

Unprecedented room temperature excitonic emissions are achieved from TiO(2) nanocrystals synthesized at 300 K by supersonic cluster beams. Transmission electron microscopy studies show the crystalline nature of the nanoparticles (NPs) with a diameter ranging from 5 to 30 nm. All the samples show mixed rutile and anatase phases as confirmed by Raman spectroscopy. XPS core level analyses evidence an O/Ti ratio of the as-grown nanoparticles of 2.30 ± 0.04. Two room temperature cathodoluminescence excitonic peaks observed at 3.16 and 3.25 eV are ascribed to the coexistence of rutile and anatase crystallographic phases respectively. Subsequent thermal treatments at 450 °C cause the complete quenching of the UV excitonic emissions and result in a more conventional broad visible band centered at 2.5 eV. HRTEM and XPS studies reveal that, after annealing, the NPs remain single crystals in nature with an O/Ti ratio of 2.20 ± 0.04. These results suggest a correlation between the emission properties and the oxygen concentration of our NPs. The achieved ability to tune the optical properties of TiO(2) nanoparticles is very promising for sensing and energy applications.     

Synthesis and characterization of 3C–SiC nanowires

Silicon carbide nanowires have been synthesized by carbothermal reduction, from carbon monoxide and single crystal silicon. Transmission electron microscopy and cathodoluminescence studies confirm the growth of a cubic β-SiC core, coated with an amorphous oxide shell. Planar defects, as stacking faults and rotational twins, are present on (1 1 1) planes. The formation of short thick rods or long thin wires, depending on the growth temperature and time, is discussed.