Electronic states and radiative transitions in LiAr

Ab initio MRD-CI calculations have been carried out on the ground and the eight lowest excited electronic states of LiAr, correlating with excited Li atom states up to 3d ²D. The ground (X²∑⁺ (2s)) and 2 ²Σ⁺ (2p) electronic states are repulsive while the higher excited states show shallow Rydberg minima. Rates of radiative bound-bound and bound-free transitions have been also calculated.     

A note on the positive solutions of second order differential equations

We obtain an existence theorem for monotone positive solutions of nonlinear second-order nonlinear differential equations via principal and nonprincipal solutions of the corresponding homogeneous equation.     

Theoretical study of the photophysical processes of a styryl-bodipy derivative eliciting an AND molecular logic gate response

We study, via density functional theory and time dependent DFT calculations, the photophysical processes of a styryl-bodipy derivative, which acts as a three metal-cation-receptor fluorophore in order to (a) gain information on the appropriate computational approach for successful prediction of molecular logic gate candidates, (b) rationalize the available experimental data and (c) understand how the given combination of three different receptors with the BODIPY fluorophore presents such interesting optoelectronic responses. The fluorophore ( 1 ), its monometallic complexes ( 1-Ca ²⁺ , 1-Zn ²⁺ , and 1-Hg ²⁺ ), and its trimetallic complex ( 2 ) are studied. The calculated λ_max values for absorption and emission are in excellent agreement with experimental data. It was found that the observed quenching of emission of 1 and of the monometallic complexes is attributed to the fact that their first excited state is a charge-transfer state whereas this does not happen for the complex 2 . It should be noted that for the correct ordering of the excited states, the inclusion of corrections to the excitation energies for nonequilibrium solvent effects is required; while in the case of 1-Ca ²⁺ , the additional explicit inclusion of the solvent is necessary for the quenching of the emission spectra.     

Theoretical study of gallium nitride molecules, GaN2 and GaN4

The electronic and geometric structures of gallium dinitride GaN 2, and gallium tetranitride molecules, GaN 4, were systematically studied by employing density functional theory and perturbation theory (MP2, MP4) in conjunction with the aug-cc-pVTZ basis set. In addition, for the ground-state of GaN 4( (2)B 1) a density functional theory study was carried out combining different functionals with different basis sets. A total of 7 minima have been identified for GaN 2, while 37 structures were identified for GaN 4 corresponding to minima, transition states, and saddle points. We report geometries and dissociation energies for all the above structures as well as potential energy profiles, potential energy surfaces and bonding mechanisms for some low-lying electronic states of GaN 4. The dissociation energy of the ground-state GaN 2 ( X (2)Pi) is 1.1 kcal/mol with respect to Ga( (2)P) + N 2( X (1)Sigma g (+)). The ground-state and the first two excited minima of GaN 4 are of (2)B 1( C 2 v ), (2)A 1( C 2 v , five member ring), and (4)Sigma g (-)( D infinityh ) symmetry, respectively. The dissociation energy ( D e) of the ground-state of GaN 4, X (2)B 1, with respect to Ga( (2)P) + 2 N 2( X (1)Sigma g (+)), is 2.4 kcal/mol, whereas the D e of (4)Sigma g (-) with respect to Ga( (4)P) + 2 N 2( X (1)Sigma g (+)) is 17.6 kcal/mol.     

Theoretical study on the electronic states of NaLi

Configuration interaction calculations have been carried out on electronic states of the NaLi molecule and the cation NaLi(+). Potential energy curves are presented for the lowest nine (1)Sigma(+), seven (1)Pi, four (1)Delta, eight (3)Sigma(+), seven (3)Pi, and four (3)Delta states of NaLi as well as for the lowest ten (2)Sigma(+), six (2)Pi, and two (2)Delta states of NaLi(+). The results of the present many-electron configuration interaction calculations on the cation are in support of previous core-polarization effective potential calculations. The present calculations on the NaLi molecule are complementary to previous theoretical work on this system, including recently observed electronic states that had not been calculated previously as well as an investigation of nonadiabatic effects leading to spectral perturbations. Furthermore, ab initio potential energy curves of the neutral and the ground state of the cation are employed to determine quantum defect that may be employed to generate potential energy curves for nd and (n+1)p (for n>3) Rydberg states of NaLi. The present results on the 3 (1)Pi and 4 (1)Pi states are in good agreement with recent experimental work, whereas on the basis of theoretical data, the recently observed state 5 (1)Pi is better described as 6 (1)Pi.     

Theoretical investigation on the electronic and geometric structure of GaN2+ and GaN4+

The electronic and geometric structures of gallium dinitride cation, GaN2+ and gallium tetranitride cation, GaN4+ were systematically studied by employing density functional theory (DFT-B3LYP) and perturbation theory (MP2, MP4) in conjunction with large basis sets, (aug-)cc-pVxZ, x = T, Q. A total of 7 structures for GaN2+ and 24 for GaN4+ were identified, corresponding to minima, transition states, and saddle points. We report geometries and dissociation energies for all the above structures as well as potential energy profiles, potential energy surfaces, and bonding mechanisms for some low-lying electronic states. The calculated dissociation energy (De) of the ground state of GaN2+, X1Sigma+, is 5.6 kcal/mol with respect to Ga+(1S) + N2(X1Sigmag+) and that of the excited state, ?3Pi, is 24.8 kcal/mol with respect to Ga+(3P) + N2(X1Sigmag+). The ground state and the first excited minimum of GaN4+ are of 1A1(C2v) and 3B1(C2v) symmetry with corresponding De of 11.0 and 43.7 kcal/mol with respect to Ga+(1S) + 2N2(X1Sigmag+) for X1A1 and Ga+(3P) + 2N2(X1Sigmag+) for 3B1.     

An approximate treatment of scattering based on the delta boundary operator

The development of a scheme to treat two-dimensional electromagneticscattering by electrically large, perfectly conducting bodiesis described. It incorporates the effects of surface curvatureand non-local phenomena and has the potential to provide thebasis for a general technique yielding more accurate predictionsthan the widely used physical optics method.