A NEW POLYMORPH OF THE [ReCl3(MeCN)(PPh3)2] COMPLEX AND ITS OXIDATION PRODUCTS

Journal of Structural Chemistry - A new polymorph of the [ReCl3(MeCN)(PPh3)2] complex is synthesized and characterized by single crystal X-ray diffraction (XRD). Its recrystallization from the...     

On Descartes’ rule for polynomials with two variations of signs

Lithuanian Mathematical Journal - For sequences of d + 1 signs + and ? beginning with a + and having exactly two variations of sign, we give some sufficient conditions for the (non)existence...     

Bremsstrahlung Effect at Resonant Compton Scattering of a Photon by a Multielectron Atom

JETP Letters - The leading role of the bremsstrahlung at resonant Compton scattering of a hard X-ray photon by a multielectron atom has been theoretically predicted. This result can be important in...     

Energy relaxation of hot carriers in single-wall carbon nanotubes by surface optical phonons of the substrate

A new mechanism is proposed for the energy relaxation of hot carriers in single-wall carbon nanotubes: scattering with the emission of surface optical phonons into the semiconductor substrate. The theory involves intrasubband and intersubband forward and backward scattering. The analytical result and numerical data indicate that intrasubband forward scattering is the main process: the corresponding lifetime comprises several femtoseconds for a quartz substrate, which allows this mechanism of energy relaxation to be considered dominating for a nanotube on the surface of a polar semiconductor or a dielectric.     

Effect of trapping centers of luminescent properties of bismuth orthogermanate

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 6, pp. 970–975, June, 1991.     

A solution of the DGLAP equation for gluon at low x

We obtain a solution of the DGLAP equation for the gluon at low x first by expanding the gluon in a Taylor series and then using the method of characteristics. We test its validity by comparing it with that of Glück, Reya and Vogt. The convergence criteria of the approximation used are also discussed. We also calculate εF ₂(x,Q)²/ε In Q ² using its approximate relations with the gluon distribution at low x. The predictions are then compared with the HERA data.     

Destruction of a solid film under the action of ultrashort laser pulse

Molecular-dynamics (MD) simulation of the destruction of a crystal film heated by a femtosecond laser pulse was carried out. Heating is assumed to be instantaneous, because there is no time for the material to be displaced during the pulse. Film destruction is caused by the interaction of unloading waves. It can be considered as a model of a more complex process of splitting out of a thin surface layer from a massive target in the case where the layer remains solid after heating. It was found that the crystal order is broken due to the stretching strains and to the strong anisotropy of residual stress, resulting in a bipartition of the layer separating from the target. The lattice stretching and the formation of anisotropic stresses are due to the expansion of a heated lattice.