Unexpected differences in the alpha-halogenation and related reactivity of sulfones with perhaloalkanes in KOH-t-BuOH

Most alkyl phenyl sulfones are readily alpha-chlorinated with CCl(4) and alpha-brominated with CBrCl3 in KOH-t-BuOH via radical-anion radical pair (RARP) reactions. While isopropyl mesityl sulfone (4) is easily alpha-chlorinated with CCl(4), it was completely recovered when treated with the more reactive CBrCl3. Subsequent investigations showed the latter result to be due to the poor acidity of 4 together with the rapid depletion of CBrCl3 and KOH by their reaction with each other, and led to a variety of other important results. 4-Hydroxyphenyl isopropyl sulfone (6) is unreactive with either CCl4 or CBrCl3 in KOH-t-BuOH, its phenoxide anion strongly reducing the electronegativity of the sulfonyl group, thereby inhibiting alpha-anion formation. This effect is reversed by the electron-withdrawing influence of two alpha-phenyls, so that benzhydryl 4-hydroxyphenyl sulfone (8) is readily alpha-halogenated in KOH-t-BuOH with CCl4 or CBrCl3. On further contact with KOH-t-BuOH the alpha-halogenated sulfones from 8 are decomposed into benzophenone and phenol. While the alpha-halogenated derivatives of 4-methoxyphenyl benzhydryl sulfone (9) are stable to base, they are decomposed even under mildly acidic conditions into 4-methoxyphenyl 4-methoxybenzenethiolsulfonate (9c), phenol, and benzophenone. Mono-alpha-halogenation of benzyl phenyl sulfone (10) enhances the rate of the subsequent halogenation, so that alpha,alpha-dihalogenation is attained while much substrate is still present and the mono-alpha-halogenated product is not detected. The ease of reductive debromination of alpha-bromo sulfones with Cl3C- was correlated with the stability of the formed alpha-anions, explaining the success with alpha-bromobenzylic sulfones but failure with alpha-bromoalkyl sulfones. In the presence of air and the absence of competing halogenation, formation of the alpha-anions of alkyl aryl sulfones is quickly accompanied by oxidative cleavage by atmospheric O2, leading to the formation of arenesulfonyl alcohols, arenesulfonyl halides, and haloarenes.     

Collocation Methods for Weakly Singular Second-kind Volterra Integral Equations with Non-smooth Solution

Collocation type methods are studied for the numerical solutionof the weakly singular Volterra integral equation of the secondkind: where the solution (t) is assumedto have the form f(t) = x(t)+r^?(t), x and being sufficientlysmooth. The solution is approximated near zero by a linear combinationof powers of t?, and away from zero by the usual polynomialrepresentation. Convergence is proved and many numerical experimentsare carried out with examples from the literature. A comparisonis made with a method of Brunner & Norsett (1981), originallydeveloped for (1) with a smooth solution. Special attentionis paid to the numerical approximation of the so-called momentintegrals which emerge in the collocation scheme.     

无机酸洗脱对胜利褐煤微晶结构及其自燃倾向性的影响

利用XRD、Raman、XPS和FT-IR表征技术,研究无机酸洗脱(HCl、H2SO4、HCl-HF)处理的胜利褐煤微晶结构的变化,采用自行设计的表面吸附仪-GC联用装置,对样品进行不同温度的低温脉冲氧化实验,考察了煤样在不同温度下氧吸附量的变化规律,通过低温脉冲氧吸附规律与TG/DTG和固定床燃烧实验关联,考察了煤样的自燃倾向。结果表明,无机酸洗脱对矿物质的脱除使得煤结构的有序度增加,石墨化程度提高,无机酸洗脱煤样与原煤相比吸氧量明显下降。随着吸附温度的升高,各煤样吸氧量明显增加,且随着脱除矿物质程度的增加,吸氧量呈减小的趋势,导致自燃倾向降低。     

An approximate treatment of scattering based on the delta boundary operator

The development of a scheme to treat two-dimensional electromagneticscattering by electrically large, perfectly conducting bodiesis described. It incorporates the effects of surface curvatureand non-local phenomena and has the potential to provide thebasis for a general technique yielding more accurate predictionsthan the widely used physical optics method.     

The electron energy loss spectrum of LiF in the band gap region

The eels of LiF has been measured in the range 0–18 eV with primary beam energies 50 eV and 1.5 keV. Four peaks are clearly resolved in the band gap region at room temperature. The amplitude of the three lower energy loss peaks was found to depend on beam exposure and temperature. It is concluded that the lowest energy peak arises at a beam induced defect, that the next two peaks arise in lithium metal liberated by the electron beam and that the peak nearest to the band edge is due to an intrinsic surface excitation.