Study of the peak effect phenomenon in single crystals of 2H-NbSe2

The weakly pinned single crystals of the hexagonal 2H-NbSe₂ compound have emerged as prototypes for determining and characterizing the phase boundaries of the possible order-disorder transformations in the vortex matter. We present here a status report based on the ac and dc magnetization measurements of the peak effect phenomenon in three crystals of 2H-NbSe₂, in which the critical current densities vary over two orders of magnitude. We sketch the generic vortex phase diagram of a weakly pinned superconductor, which also utilizes theoretical proposals. We also establish the connection between the metastability effects and pinning.     

Texture and electronic activity of grain boundaries in Cu(In,Ga)Se2 thin films

The influence of different film textures on the electronic properties of polycrystalline Cu(In,Ga)Se₂ absorbers is studied by measuring the laterally resolved optoelectronic properties of differently textured Cu(In,Ga)Se₂ films with Kelvin probe force microscopy and cathodoluminescence. The grain boundaries in (112)- and (220/204)-textured films behave differently. The work-function profile measured with the Kelvin probe across a grain boundary in (112)-textured films shows a dip indicating positive charges at the grain boundaries. In panchromatic cathodoluminescence mappings in a transmission electron microscope, such grain boundaries appear dark, i.e. the strongly reduced luminescence indicates that the grain boundaries represent strong non-radiative recombination centers. In contrast, grain boundaries in (220/204)-textured films give rise to a dip or a step in the work function indicating slightly negative charge or neutrality. Cathodoluminescence is reduced at such grain boundaries, but less dramatically than in the (112)-textured case. However, when Na is present in the (220/204)-textured films, the grain boundaries are almost invisible in cathodoluminescence mappings. This strong passivating action of Na occurs only in the (220/204)-textured films, due to a particular grain-boundary population. In (112)-textured films and films without pronounced texture, this passivation effect is much less noticeable. PACS 73.50.Gr; 73.61.Ga; 78.60.Hk; 87.64.Dt     

A very special nonexistence theorem for abelian difference sets

It is wellknown that the technique of character sums together with the tools of algebraic number theory is the adequate method for the study of difference sets in abelian groups, compare for instance Ott [5] or Turyn [6]. In this paper we use this method to prove a new non-existence theorem for certain difference sets in abelian groups of order rp^a rp^a , where r 1 2 r \neq 2 and p are distinct primes.     

On a theorem of Shchepin and Repovš concerning the smoothness of compacta

We show that a theorem of Shchepin and Repovš concerning the smoothness of compacta follows from the theory of semicontinuous relations.     

Evidence for complex magnetic order in U2Zn17: A μ+ SR studySR study

μ⁺ SR-measurements in transversally applied magnetic fields of 2000 G and 4000 G on heavy-electron single crystal U₂Zn₁₇ are presented. They reveal that at least two types of interstitial sites are occupied by the positive muons. One of these sites (1/3, 2/3, 5/6) could be identified via induced local dipolar fields which aboveT _N=9.7 K can exactly be derived from the magnetic susceptibility. The corresponding component of the μ⁺-signal exhibits a steplike decrease by about 40% atT _N which is caused by the onset of a very broad distribution of static internal magnetic fields (ΔB≈1000 G) with zero average. Such a field distribution is in distinct contrast to dipolar-field calculations performed for the simple antiferromagnetic structure deduced from neutron diffraction. The remaining 60% of the muons contributing to this component belowT _N are subject to a narrow static field distribution (ΔB≈1 G). The induced dipolar fields at the site (1/3, 2/3, 5/6) are temperature-independent belowT _N. A weak dipolar coupling to the U-moments renders similar observations for muons occupying the second type of interstitial impossible.     

Discrete storage processes and their Poisson flow and fluid flow approximations

Consider discrete storage processes that are modulated by environmental processes. Environmental processes cause interruptions in the input and/or output processes of the discrete storage processes. Due to the difficulties encountered in the exact analysis of such discrete storage systems, often Poisson flow and/or fluid flow models with the same modulating environmental processes are proposed as approximations for these systems. The analysis of Poisson flow and fluid flow models is much easier than that of the discrete storage processes. In this paper we give sufficient conditions under which the content of the discrete storage processes can be bounded by the Poisson flow and the fluid flow models. For example, we show that Poisson flow models and the fluid flow models developed by Kosten (and by Anick, Mitra and Sondhi) can be used to bound the performance of infinite (finite) source packetized voice/data communication systems. We also show that a Poisson flow model and the fluid flow model developed by Mitra can be used to bound the buffer content of a two stage automatic transfer line. The potential use of the bounding techniques presented in this paper, of course, transcends well beyond these examples.Supported in part by NSF grant DMS-9308149.