首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   8篇
  免费   0篇
化学   1篇
数学   1篇
物理学   6篇
  2007年   3篇
  2006年   3篇
  2005年   1篇
  2002年   1篇
排序方式: 共有8条查询结果,搜索用时 15 毫秒
1
1.
We report the direct measurement of the persistent current carried by a single electron by means of magnetization experiments on self-assembled InAs/GaAs quantum rings. We measured the first Aharonov-Bohm oscillation at a field of 14 T, in perfect agreement with our model based on the structural properties determined by cross-sectional scanning tunneling microscopy measurements. The observed oscillation magnitude of the magnetic moment per electron is remarkably large for the topology of our nanostructures, which are singly connected and exhibit a pronounced shape asymmetry.  相似文献   
2.
We demonstrate that the soft nature of organic semiconductors can be exploited to directly measure the potential distribution inside such an organic layer by scanning-tunneling microscope (STM) based spectroscopy. Keeping the STM feedback system active while reducing the tip-sample bias forces the tip to penetrate the organic layer. From an analysis of the injection and bulk transport processes it follows that the tip height versus bias trace obtained in this way directly reflects the potential distribution in the organic layer.  相似文献   
3.
We have used cross-sectional scanning-tunneling microscopy (X-STM) to compare the formation of self-assembled InAs quantum dots (QDs) and wetting layers on AlAs (1 0 0) and GaAs (1 0 0) surfaces. On AlAs we find a larger QD density and smaller QD size than for QDs grown on GaAs under the same growth conditions (500 °C substrate temperature and 1.9 ML indium deposition). The QDs grown on GaAs show both a normal and a lateral gradient in the indium distribution whereas the QDs grown on AlAs show only a normal gradient. The wetting layers on GaAs and AlAs do not show significant differences in their composition profiles. We suggest that the segregation of the wetting layer is mainly strain-driven, whereas the formation of the QDs is also determined by growth kinetics. We have determined the indium composition of the QDs by fitting it to the measured outward relaxation and lattice constant profile of the cleaved surface using a three-dimensional finite element calculation based on elasticity theory.  相似文献   
4.
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a GaAs/(AlGa)As resonant tunneling diode incorporating a layer of ring-shaped quantum dots (QDs) in the quantum well (QW). The dots give rise to a series of four unusual resonances in I(V) which show a high degree of reproducibility across the epitaxial wafer. By combining data for B parallel and perpendicular to the growth axis z, we identify that the unusual resonances arise from resonant tunneling into QD excited states with 2pz-like symmetry. The two series of magneto-oscillations in I for Bz allow us to determine the resonant charging and discharging of the QW with varying bias.  相似文献   
5.
By means of density functional theory calculations we have investigated the role of adsorbed atomic oxygen and adsorbed OH in the oxidation of ammonia on Pt{1 1 1}. We have investigated the dissociation of NH3,ads, NH2,ads and NHads on Pt{1 1 1} and the oxidation of these species by Oads and OHads. We have done normal mode frequency analysis and work function calculations to characterise reactant, product and transition states. We have determined reaction energies, activation entropies, kinetic parameters and corrected total energies with the zero point energy. We have shown that Oads only activates the dehydrogenation of NH3,ads and that OHads activates the dehydrogenation of all NHx,ads species and have reasoned this difference in activation by a bond order conservation principle. We have pointed out the importance of a zero point energy correction to the reaction energies and barriers. We have compared the calculated vibrational modes of the adsorbates with corresponding experimental EELS data. This has led to a revise of the frequency assignment of ν(Pt-OH2), a revise in the identification of a NH2 species on the Pt{1 1 1} surface after electron bombardment of pre-adsorbed NH3 and the confirmation of an ammonia dimer binding model at the expense of a hollow site occupation by ammonia on the Pt{1 1 1} surface.  相似文献   
6.
Catalytic ammonia oxidation over platinum has been studied experimentally from UHV up to atmospheric pressure with polycrystalline Pt and with the Pt single crystal orientations (533), (443), (865), and (100). Density functional theory (DFT) calculations explored the reaction pathways on Pt(111) and Pt(211). It was shown, both in theory and experimentally, that ammonia is activated by adsorbed oxygen, i.e. by O(ad) or by OH(ad). In situ XPS up to 1 mbar showed the existence of NH(x)(x= 0,1,2,3) intermediates on Pt(533). Based on a mechanism of ammonia activation via the interaction with O(ad)/OH(ad) a detailed and a simplified mathematical model were formulated which reproduced the experimental data semiquantitatively. From transient experiments in vacuum performed in a transient analysis of products (TAP) reactor it was concluded that N(2)O is formed by recombination of two NO(ad) species and by a reaction between NO(ad) and NH(x,ad)(x= 0,1,2) fragments. Reaction-induced morphological changes were studied with polycrystalline Pt in the mbar range and with stepped Pt single crystals as model systems in the range 10(-5)-10(-1) mbar.  相似文献   
7.
Evolution of foliations of the plane is shown, under a conditionof constant divergence, to be linked to the scattering problemfor the integrable modified Korteweg–de Vries hierarchy.This result is applied to a set of kinematic relations whicharise in the theory of ideal fibre-reinforced fluids. In particular,it is established that the fibres, which are convected withthe fluid, constitute generalized tractrices.  相似文献   
8.
We present an atomic-scale analysis of the indium distribution of self-assembled (In,Ga)As quantum rings (QRs), which are formed from InAs quantum dots by capping with a thin layer of GaAs and subsequent annealing. We find that the size and shape of QRs as observed by cross-sectional scanning tunneling microscopy (X-STM) deviate substantially from the ring-shaped islands as observed by atomic force microscopy on the surface of uncapped QR structures. We show unambiguously that X-STM images the remaining quantum dot material whereas the AFM images the erupted quantum dot material. The remaining dot material shows an asymmetric indium-rich crater-like shape with a depression rather than an opening at the center and is responsible for the observed electronic properties of QR structures. These quantum craters have an indium concentration of about 55% and a diameter of about 20 nm, which is consistent with the observed electronic radius of QR structures. Based on the structural information from the X-STM measurements, we calculate the magnetization as a function of the applied magnetic field. We conclude that, although the real QR shape differs strongly from an idealized circular-symmetric open ring structure, Aharonov–Bohm-type oscillations in the magnetization can be expected.  相似文献   
1
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号