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Bin Gu Hongyuan Liu Yiu-Wing Mai Xi Qiao Feng Shou Wen Yu Centre for Advanced Materials Technology School of Aerospace Mechanical Mechatronic Engineering J University of Sydney Sydney NSW Australia 《Acta Mechanica Sinica》2009,(1)
In the present paper,continuum fracture mecha-nics is used to analyze the Smart-Cut process,a recentlyestablished ion cut technology which enables highly efficientfabrication of various silicon-on-insulator(SOI)wafers ofhigh uniformity in thickness.Using integral transform andCauchy singular integral equation methods,the mode-I andmode-Ⅱ stress intensity factors,energy release rate,and crackopening displacements are derived in order to examine seve-ral important fracture mechanisms involved in the Smart... 相似文献
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Yanping Sun Tracey A.Robson Trevor C.BrownSchool of Biological Biomedical & Molecular Sciences University of New England Armidale NSW Australia Manuscript received July revised August 《天然气化学杂志》2002,(Z1)
The oxidative dehydrogenation (ODH) of isobutane over Cr2O3/La2(CO3)3 has been investigated in a low-pressure Knudsen cell reactor, under conditions where the kinetics of the primary reaction steps can be accurately determined. By heating the catalyst at a constant rate from 150-300℃, temperature fluctuations due to non-equilibrium adsorption are minimized. The evolved gas profiles show that ODH to isobutene and water is a primary reaction pathway, while carbon dioxide, which forms from the catalyst during reaction, is the only other product. This CO2 evolution may enhance the activity of the catalyst. Isobutene formation proceeds with the participation of lattice oxygen from the Cr2O3/La2(CO3)3 catalyst. The intrinsic Arrhenius rate constant for the ODH of isobutane isk(s-1) = 1011.5±2.2exp{-((55±5) -ΔHads kJmol-1)/RT}The small pre-exponential factor is expected for a concerted mechanism and for such a catalyst with a small surface area and limited porosity. 相似文献
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Thermodynamic analysis of mixed and dry reforming of methane for solar thermal applications 下载免费PDF全文
Thermodynamic analysis of the reforming of methane with carbon dioxide alone ("dry reforming") and with carbon dioxide and steam together ("mixed reforming") is performed as part of a project which investigates the suitability of these endothermic reactions for the storage of solar thermal energy. The Gibbs free energy minimization method was employed to identify thermodynamically optimal operating conditions for dry reforming as well as mixed reforming with a desired H2/CO molar ratio of 2. The non-stoichiometric equilibrium model was developed using FactSage software to conduct the thermodynamic calculations for carbon formation, H2/CO ratio, CH4 conversion and H2 yield as a function of reaction temperature, pressure and reactant molar ratios. Thermodynamic calculations demonstrate that in the mixed reforming process, optimal operating conditions in a carbon-free zone are under H2O/CH4 /CO2 =1.0/1.0/0.5, p = 1 to 10 bar and T = 800 to 850℃ for the production of syngas with a H2 /CO molar ratio of 2. Under the optimal conditions, the maximum H2 yield of 88.0% is achieved at 1 bar and 850℃ with a maximum CH4 conversion of 99.3%. In the dry reforming process, a carbon formation regime is always present at a CO2/CH4 molar ratio of 1 for T = 700 1000℃ and p = 1-30 bar, whereas a carbon-free regime can be obtained at a CO2/CH4 molar ratio greater than 1.5 and T≥800℃. 相似文献
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B. Gu H. Liu Y.-W. Mai Centre for Advanced Materials Technology School of Aerospace Mechanical Mechatronic Engineering J University of Sydney Sydney NSW Australia X. Q. Feng S. W. Yu 《Acta Mechanica Sinica》2009,(2)
In Part 2 of the paper on the Smart-Cut process,the effects of bonding flaws characterized by the size andinternal pressure before and after splitting are studied byusing fracture mechanics models.It is found that the bon-ding flaws with large size are prone to cause severe devia-tion of defect growth,leading to a non-transferred area ofthin layer when splitting.In a practical Smart-Cut processwhere the internal pressure of bonding flaws is very small,large interfacial defects always promote defect grow... 相似文献
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