Studien über Kernalkylierung

Ohne Zusammenfassung     

Spray thermometry using thermographic phosphors

In this study a novel technique for 2D spray temperature measurement is presented. For this purpose the thermographic phosphor (TP) Mg₄GeO_5.5F:Mn was dispersed in n-dodecane and atomised using a conventional semi solid-cone nozzle. The thermographic phosphor was excited electronically by a frequency tripled Nd:YAG laser (355 nm). An ICCD-camera in combination with an image doubler detected the subsequently emitted phosphorescence at both peak emission wavelengths located at 633 nm and 659 nm, respectively. Utilising suitable calibration measurements, the local spray temperature was determined by evaluating the intensity ratio of both emission wavelengths. To the knowledge of the authors this is the first approach of spray temperature measurement exploiting the temperature dependent intensity ratio of thermographic phosphors. PACS 07.20.Dt; 32.50.+d     

Problems, Models and Complexity. Part II: Application to the DLSP

In Part I of this study, we suggest to identify an operations research (OR) problem with the equivalence class of models describing the problem and enhance the standard computer-science theory of computational complexity to be applicable to this situation of an often model-based OR context. The Discrete Lot-sizing and Scheduling Problem (DLSP) is analysed here in detail to demonstrate the difficulties which can arise if these aspects are neglected and to illustrate the new theoretical concept. In addition, a new minimal model is introduced for the DLSP which makes this problem eventually amenable to a rigorous analysis of its computational complexity.     

Idempotency of Extensions via the Bicompletion

Let Top ₀ be the category of topological T ₀-spaces, QU ₀ the category of quasi-uniform T ₀-spaces, T : QU ₀ → Top ₀ the usual forgetful functor and K : QU ₀ → QU ₀ the bicompletion reflector with unit k : 1 → K. Any T-section F : Top ₀ → QU ₀ is called K-true if KF = FTKF, and upper (lower) K-true if KF is finer (coarser) than FTKF. The literature considers important T-sections F that enjoy all three, or just one, or none of these properties. It is known that T(K,k)F is well-pointed if and only if F is upper K-true. We prove the surprising fact that T(K,k)F is the reflection to Fix(TkF) whenever it is idempotent. We also prove a new characterization of upper K-trueness. We construct examples to set apart some natural cases. In particular we present an upper K-true F for which T(K,k)F is not idempotent, and a K-true F for which the coarsest associated T-preserving coreflector in QU ₀ is not stable under K. We dedicate this paper to the memory of Sérgio de Ornelas Salbany (1941–2005).     

Investigations of alkali doped Fe2O3--V2O5 catalysts by transmission and conversion electron Mössbauer spectroscopy

Fe₂O₃--V₂O₅ catalysts doped with Cs₂SO₄ (molar ratio: V:Fe:Cs=1:0.74:0.06) were found to be a rather inhomogeneous mixture of various crystalline and amorphous iron vanadate phases. After calcination in air the catalyst was divided into three different parts which were analyzed separately revealing the formation of FeVO₄ in the top and bottom fraction of the crucible and Fe₂V₄O₁₃ in the middle fraction. As compared to the well crystallized FeVO₄ reference sample, the quadrupole splittings of FeVO₄ in the Cs-doped catalysts were larger pointing to more distorted iron sites which were assumed to be responsible for high catalytic selectivities. In contrast, the quadrupole splittings of FeVO₄ in the less selective K- and Rb-doped Fe₂O₃--V₂O₅ catalysts were smaller. Additional components in the bottom fraction were also α-Fe₂O₃ and Fe_1-xS. As indicated by the CEMS spectra the latter is located preferentially on the surface of the catalyst particles. This revised version was published online in August 2006 with corrections to the Cover Date.     

Positron-lifetime study of vacancy annealing in neutron-irradiated GaAs

Positron-lifetime measurements have been used to study the annealing of vacancies in neutron-irradiated GaAs. The vacancies which are interpreted as defects in the Ga sublattice disappear in a single annealing stage (at 500°C in GaAs doped with Si or Zn, and at 600°C in Cr-doped GaAs).     

Growth and long-run stability

This paper analyses the implications of persistent growth upon the stability properties of dynamic models. Besides the traditional concept of asymptotic stability, new stability criteria-strong/weak absolute, strong/weak relative, strong/weak logarithmic stability-are introduced, and global stability conditions for satisfying these criteria are stated for general first-order autonomous differential equations. The conflict between rapidity of growth and the degree of stability is demonstrated. Economic applications of the stability theorems are illustrated within the growth models of Harrod and Solow.