Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions

We have studied ultra-fast carrier dynamics of photo-excited carriers in hydrogenated microcrystalline silicon prepared by a very high frequency glow-discharge technique. We report on direct observation of two types of dynamics using selective photo-excitation in picosecond pump and probe measurements. One type of the observed dynamics has been found to be independent of the sample preparation, while the other reflects the relative weights of crystalline and amorphous fractions. We propose a simple rate-equation model that describes the carrier dynamics in microcrystalline silicon in terms of the composition of those in Si microcrystallites and in the a-Si:H tissue which surrounds the microcrystallites. The model without any fitting parameters reproduces the experimental data very well when the dynamics are scaled with relative volume fractions as obtained from Raman spectra. Received: 23 November 2000 / Accepted: 17 March 2001 / Published online: 23 May 2001     

100-TW femtosecond laser based on parametric amplification

In experiments on the parametrical amplification of femtosecond pulses in wide-aperture DKDP crystals, a power of more than 100 TW has been reached, which is much higher than the record level achieved in such lasers. The energy efficiency obtained for the parametric amplifier is equal to 27%. The energy of a 72-fs pulse is equal to 10 J.     

Dynamic stability of a spiral domain in an ac magnetic field

The dependence of the stability of a magnetic spiral domain in a film on the parameters of the film and its domain structure and on an external magnetic field is considered within a phenomenological model. The model allows one to explain a number of experimentally observed properties of dynamic spiral domains resulting from the process of self-organization of domains and domain walls in an iron-garnet film placed in an external ac magnetic field.     

Mappings of finite distortion: Hausdorff measure of zero sets

We prove that a for a mapping f of finite distortion , the -Hausdorff measure of any point preimage is zero provided is integrable, with , and the multiplicity function of f is essentially bounded. As a consequence for we obtain that the mapping is then open and discrete. Received: 18 June 2001 / Revised version: 31 January 2002 / Published online: 27 June 2002     

Separation in distributive congruence lattices

We define separable sets in algebraic lattices. For a finitely generated congruence distributive variety V \mathcal{V} , we show a close connection between non-separable sets in congruence lattices of algebras in V \mathcal{V} and the structure of subdirectly irreducible algebras in V \mathcal{V} . We apply the general results to some lattice varieties.     

Lower bounds of the Laplacian graph eigenvalues

In this paper we prove that all positive eigenvalues of the Laplacian of an arbitrary simple graph have some positive lower bounds. For a fixed integer k 1 we call a graph without isolated vertices k-minimal if its kth greatest Laplacian eigenvalue reaches this lower bound. We describe all 1-minimal and 2-minimal graphs and we prove that for every k 3 the path P_k+1 on k + 1 vertices is the unique k-minimal graph.     

Natural Operators Lifting Vector Fields to Bundles of Weil Contact Elements

Let A be a Weil algebra. The bijection between all natural operators lifting vector fields from m-manifolds to the bundle functor K ^A of Weil contact elements and the subalgebra of fixed elements SA of the Weil algebra A is determined and the bijection between all natural affinors on K ^A and SA is deduced. Furthermore, the rigidity of the functor K ^A is proved. Requisite results about the structure of SA are obtained by a purely algebraic approach, namely the existence of nontrivial SA is discussed.     

Volume Chemistry of Nitrogen in Binary Metal Nitrides and Subnitrides

A comparison of the concept of volume increments created by W. Biltz with that based on quantum mechanical calculations by R.F.W. Bader was performed for crystal structures of binary metal nitrides and ‐subnitrides. The mutual comparison of both concepts permits insights into the bonding relationships of these compounds and reveals the considerable range of volume demand of a strongly polarisable bonding partner, such as the nitride ion. Finally it becomes clear that the Biltz volume increments show a quantum‐chemical relevance in the chemistry of solids.