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Voltammetric sensor for glutathione determination based on ferrocene-modified carbon paste electrode
Jahan Bakhsh Raoof Reza Ojani Mansureh Kolbadinezhad 《Journal of Solid State Electrochemistry》2009,13(9):1411-1416
The electrocatalytic oxidation of glutathione (GSH) has been studied at the surface of ferrocene-modified carbon paste electrode
(FMCPE). Cyclic voltammetry (CV), double potential step chronoamperometry, and differential pulse voltammetry (DPV) techniques
were used to investigate the suitability of incorporation of ferrocene into FMCPE as a mediator for the electrocatalytic oxidation
of GSH in buffered aqueous solution. Results showed that pH 7.00 is the most suitable for this purpose. In the optimum condition
(pH 7.00), the electrocatalytic ability of about 480 mV can be found and the heterogeneous rate constant of catalytic reaction
was calculated as . Also, the diffusion coefficient of glutathione, D, was found to be 3.61 × 10–5 cm2 s−1. The electrocatalytic oxidation peak current of glutathione at the surface of this modified electrode was linearly dependent
on the GSH concentration and the linear analytical curves were obtained in the ranges of 3.2 × 10–5 M–1.6 × 10–3 M and 2.2 × 10–6 M–3.5 × 10–3 M with cyclic voltammetry and differential pulse voltammetry methods, respectively. The detection limits (3σ) were determined as 1.8 × 10–5 M and 2.1 × 10–6 M using CV and DPV, respectively. Finally, the electrocatalytic oxidation of GSH at the surface of this modified electrode
can be employed as a new method for the voltammetric determination of glutathione in real samples such as human plasma. 相似文献
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Mansureh?Ganjali E.?V.?IvakinEmail author T.?Sawada A.?V.?Sukhodolov A.?Ya.?Khairullina 《Journal of Applied Spectroscopy》2004,71(6):869-874
A method of determining the thermal diffusivity of a thin film of a transparent dielectric in the direction normal to the surface has been developed. It is based on excitation of reflecting dynamic gratings. The effectiveness of the method is checked experimentally with the example of a thermally oxidized submicron SiO2 film on a silicon substrate. The temperature dependence of in the range 290–420 K is measured. The possibilities of setting up thermal measurements of films tens of nanometers thick and its problems are discussed.Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 71, No. 6, pp. 793–797, November–December, 2004.This revised version was published online in April 2005 with a corrected cover date. 相似文献
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