Effect of absorbed pump power on the quality of output beam from monolithic microchip lasers

The dependence of the beam propagation factor (M ² parameter) with the absorbed pump power in the case of monolithic microchip laser under face-cooled configuration is extensively studied. Our investigations show that the M ₂ parameter is related to the absorbed pump power through two parameters (α and β) whose values depend on the laser material properties and laser configuration. We have shown that one parameter arises due to the oscillation of higher order modes in the microchip cavity and the other parameter accounts for the spherical aberration associated with the thermal lens induced by the pump beam. Such dependency of M ² parameter with the absorbed pump power is experimentally verified for a face-cooled monolithic microchip laser based on Nd³⁺ -doped GdVO₄ crystal and the values of α and β parameters were estimated from the experimentally measured data points.     

Annealing and measurement temperature dependence of W2B5-based rectifying contacts to n-GaN

The thermal stability and measurement temperature dependence of Schottky contact characteristics on n-GaN using a W₂B₅/Ti/Au metallization scheme was studied using current-voltage (I-V), scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) measurements. The elemental profile obtained from samples annealed at 350 °C showed some titanium diffusion into the gold layer but little other difference from the as-deposited wafer. Annealing at 700 °C produced significant diffusion of titanium. The Schottky barrier height increased with anneal temperature up to 200 °C, reaching a maximum value of 0.65 eV, but decreased at higher annealing temperatures. The reverse breakdown voltage from diodes fabricated using the W₂B₅-based contacts showed a similar dependence. The reverse current magnitude was larger than predicted by thermionic emission alone. The barrier height showed only minor changes with measurement temperature up to 150 °C.     

Modification of magnetic anisotropy in metallic glasses using high-energy ion beam irradiation

Heavy ion irradiation in the electronic stopping power region induces macroscopic dimensional change in metallic glasses and introduces magnetic anisotropy in some magnetic materials. The present work is on the irradiation study of ferromagnetic metallic glasses, where both dimensional change and modification of magnetic anisotropy are expected. Magnetic anisotropy was measured using Mössbauer spectroscopy of virgin and irradiated Fe₄₀Ni₄₀B₂₀ and Fe₄₀Ni₃₈Mo₄B₁₈ metallic glass ribbons. 90 MeV ¹²⁷I beam was used for the irradiations. Irradiation doses were 5×10¹³ and 7.5×10¹³ ions/cm². The relative intensity ratios D ₂₃ of the second and third lines of the Mössbauer spectra were measured to determine the magnetic anisotropy. The virgin samples of both the materials display in-plane magnetic anisotropy, i.e., the spins are oriented parallel to the ribbon plane. Irradiation is found to cause reduction in magnetic anisotropy. Near-complete randomization of magnetic moments is observed at high irradiation doses. Correlation is found between the residual stresses introduced by ion irradiation and the change in magnetic anisotropy.     

Telluro- and seleno-bridged TiIV-MII (M = Ni,Pd, Pt) heterobimetallic complexes

Summary Heterobimetallic complexes of the types [Cp₂Ti(-EAr)₂-M(dppe)] (ClO₄)₂ [(1)–(4); M, E = Ni, Te (1); Ni, Se (2); Pt, Te (3); Pt, Se (4); Ar = Ph (a), C₆H₄-4-Me (b), C₆H₄-4-OMe (c), C₆H₄-4-OEt (d)] and [Cp₂Ti(-TeAr)₂-MCl ₂] [M = Pd (5), Pt (6)] were obtained by the reactions of Cp₂Ti(EAr)₂ with M(dppe)(ClO₄)₂ and M(PhCN)₂Cl₂, respectively. While (1), (5) and (6) are stable in the solid state as well as in solution, (2)–(4) undergo dissociation to M(dppe)(EAr)₂ and Cp₂Ti(ClO₄)₂ in solution, as shown by multinuclear (³¹P{¹H},¹⁹⁵Pt{¹H}, ¹²⁵Te{¹H}) n.m.r. studies. The reaction of Cp₂Ti(SeAr)₂ with M(PhCN)₂Cl₂, however, leads to the formation of Cp₂TiCl₂ and a polymeric material [M(SeAr)₂] _n .     

A convenient synthesis of linear pyranocoumarins. Xanthyletin and 3-Phenylxanthyletin

A convenient synthesis of linear pyranocoumarins, viz., 8,8-dimethyl-2H,8H-benzo[1,2-b; 5,4-b]dipyran-2-one (xanthyletin,1) and 8,8-dimethyl-3-phenyl-2H,8H-benzo[1,2-b; 5,4-b]dipyran-2-one (3-phenylxanthyletin,2) is described. The key steps are blocking the 8-position of appropriate 7-hydroxy-2H-1-benzopyran-2-one derivatives with iodine and 1,1-dimethyl-2-propynylation followed by cyclisation.

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Ein einfacher Syntheseweg zu linearen Pyranocumarinen. Xanthyletin und 3-Phenylxanthyletin

Zusammenfassung Es wird ein vorteilhafter Weg zur Synthese von linearen Pyranocumarinen am Beispiel von Xanthyletin und 3-Phenylxanthyletin gezeigt. Das Syntheseprinzip besteht in einer Blockierung der 8-Position des entsprechenden 7-Hydroxy-2H-1-benzopyran-2-ons mit Jod und einer 1,1-Dimethyl-2-propinylierung mit nachfolgender Cyclisierung.

     

Determination of ten rare-earth elements and yttrium in silicate rocks by ICP-AES without separation and preconcentration

Lanthanum, cerium, neodymium, samarium, europium, gadolinium, dysprosium, erbium, ytterbium, lutetium and yttrium have been determined in 8 international rock standards by inductively coupled plasma atomic emission spectrometry (ICP-AES) without prior ion-exchange separation and preconcentration. The results for La, Ce, Nd, Eu, Dy, Yb and Y were in good agreement with the reported values, whereas those for Sm, Gd, Er and Lu were less accurate. However, the results for Sm, Gd, Er and Lu can also be used for studies of petrogenesis.     

Infrared and Raman spectral interpretations of the ferroelectric phases of NaH3(SeO3)2 and NaD3(SeO3)2

The infrared and Raman spectra of NaH₃(SeO₃)₂ and NaD₃(SeO₃)₂ have been recorded from 24 to 300°K. The interpretation, assignments, and analysis of the spectral studies are presented on the paraelectric α phase (proton disordered), ferroelectric β phase (proton ordered) and ferroelectric γ phase (proton ordered). A discussion of a newly proposed proton-triggered phase transition mechanism and a possible origin of the hydrogen-bonded OH stretching region of KH₂PO₄-type ferroelectrics is given.