Rehabilitation of the Gauss-Jordan algorithm

Summary In this paper a Gauss-Jordan algorithm with column interchanges is presented and analysed. We show that, in contrast with Gaussian elimination, the Gauss-Jordan algorithm has essentially differing properties when using column interchanges instead of row interchanges for improving the numerical stability. For solutions obtained by Gauss-Jordan with column interchanges, a more satisfactory bound for the residual norm can be given. The analysis gives theoretical evidence that the algorithm yields numerical solutions as good as those obtained by Gaussian elimination and that, in most practical situations, the residuals are equally small. This is confirmed by numerical experiments. Moreover, timing experiments on a Cyber 205 vector computer show that the algorithm presented has good vectorisation properties.     

Investigation of organic impurities adsorbed on and incorporated into electroplated copper layers

At room temperature electroplated copper layers exhibit changes in resistivity, residual stress, and microstructure. This process, known as self-annealing, is intimately linked to the release of organic impurities, which stem from the incorporation of organic additives into the Cu layer in the course of the electroplating process. The behavior of these impurities during self-annealing, represented by the carbon content, could be detected by analytical radio frequency glow discharge optical emission spectrometry (GD-OES) and carrier gas hot extraction (CGHE). The precondition of a quantitative determination is a surface cleaning procedure to remove adsorbed organics from the copper surface. It was observed that at first almost all impurities have to leave the Cu metallization before an accelerated abnormal grain growth can start. The small amount of remaining organic species after self-annealing could be quantified by both examination techniques, GD-OES and CGHE.     

Uran im Quellengebiete von Franzensbad

Ohne Zusammenfassung     

Spin-dependent shot noise of inelastic transport through molecular quantum dots

Here we present a theoretical analysis of the effect of inelastic electron scattering on spin-dependent transport characteristics (conductance, current–voltage dependence, magnetoresistance, shot noise spectrum, Fano factor) for magnetic nanojunction. Such device is composed of molecular quantum dot (with discrete energy levels) connected to ferromagnetic electrodes (treated within the wide-band approximation), where molecular vibrations are modeled as dispersionless phonons. Non-perturbative computational scheme, used in this work, is based on the Green's function theory within the framework of mapping technique (GFT–MT), which transforms the many-body electron–phonon interaction problem into a single-electron multi-channel scattering problem. The consequence of the localized electron–phonon coupling is polaron formation. It is shown that polaron shift and additional peaks in the transmission function completely change the shape of considered transport characteristics.