Synthesis and Reactions of Some New Pyrrolylfuro[2,3‐d]Pyrimidines and Pyrrolopyrazinofuropyrimidines

5‐Amino‐4‐methyl‐2‐phenyl‐6‐substitutedfuro[2,3‐d]pyrimidines ( 2a‐c ) were reacted with 2,5‐dimethoxytetrahydrfuran to afford the pyrrolyl derivatives 3a‐c . Compound 3a was chosen as intermediate for the synthesis of poly fused heterocycles incorporated furopyrimidines moiety 4–11 . Some of the synthesized compounds were screened for their antibacterial and antifungal activities.     

On the Discrete Hardy Inequality

Necessary and sufficient conditions for the boundedness of thediscrete Hardy operator of the form , from to when 0 < q < 1 <p , is given.     

Computer-generated, three-dimensional reconstruction of histological parallel serial sections displaying microvascular and glandular structures in human endometrium

This paper describes a technique to develop high-resolution three-dimensional (3D) images of microvasculature structures in curettage, hysterectomy or endometrial resection biopsies using parallel histological serial sections. Employing a labelled streptavidin-biotin-alkaline phosphatase (LSAB(+)) method and visualising by using DAB(+) with the primary antibody, mouse anti human Q-Bend-10, the images were directly digitised from a light microscope into the KS400 Universal Image Processing and Analysis software via a CCD colour camera; binary images of the structures were created and the binary images were exported into VoxBlast 3D rendering software to view still and rotating 3D images on a computer monitor. This in turn enabled hard copies of the full sequence to be printed.     

Structural,optical and electrical properties of undoped and Si-doped AlxGa1−xN thin films on Si (1 1 1) substrate grown by PA-MBE

We have studied the structural properties of undoped and Si-doped Al_xGa_1?xN/GaN/AlN on Si (1 1 1) substrate prepared by plasma-assisted molecular beam epitaxy (PA-MBE) using high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). In comparison with undoped AlGaN, the roughness and dislocation density on the surface of the AlGaN layer decrease with Si doping. Full width half maximum (FWHM) of the undoped and Si-doped samples were equal to 0.69° and 0.52°, respectively. This indicates that the Si doping improves the crystalline quality of the Al_xGa_1?xN layer compared with the undoped one. Raman scattering measurement reveals that the optical phonon modes of A₁(LO) and E₂(H) of the AlGaN show a one-mode and two-modes behavior, respectively. The Fourier-transform infrared reflectance (FTIR) investigation confirms the one-mode (two-mode) behavior of the LO (TO) phonon in our samples. This is in good agreement with Raman measurement. Finally, the barrier height (Φ_B) of undoped and Si-doped Al_xGa_1?xN samples was found to be 0.86 and 0.74 eV, respectively.     

Studies on photoinduced effects in pulse-electrodeposited Ag/Hg-1212/CdSe hetero-nanostructures

Metal/superconductor/semiconductor (Ag/Hg-1212/CdSe) hetero-nanostructures have been fabricated using pulse-electrodeposition technique and are characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy (SEM) studies. The junction capacitance of Ag/Hg-1212, Hg-1212/CdSe and Ag/Hg-1212/CdSe heterojunctions is measured in dark and under laser irradiation at room temperature. The nature of the junction formed and built-in-junction potentials were determined. The increase in carrier concentration across the junction due to photo-irradiation has been observed.     

Effect of laser irradiation of C-V characteristics of electrodeposited Ag/Tl-2223/CdSe hetero-nanostructures

One of the innovative technological directions for the high-temperature superconductors has been persued by fabricating the heteroepitaxial multilayer structures such as superconductor-semiconductor heterostructures. In the present investigation, metal/superconductor/semiconductor (Ag/Tl-2223/CdSe) hetero-nanostructures have successfully been fabricated using dc electrodeposition technique and were characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy (SEM) studies. The measurement of junction capacitance as a function of biasing voltage was used for the estimation of junction built-in-potential (V _D) and to study the charge distribution in a heterojunction. The Mott-Schottky plots were measured for each junction in dark and under the photo-irradiation. The effect of laser irradiation on C-V characteristics of hetero-nanostructure has been studied.     

在不同温度下球墨鑄铁的冲击性能

本文描述高温冲击实验的技术,以及由-85℃至1070℃的铸态和锻造后的球墨铸铁的冲击性能。研究结果找到了基体主要为铁素体的球墨铸铁的两个变脆温度范围(-20℃以下和550℃至700℃之间)和一个比较具有韧性的温度范围(850℃与1050℃之间)。在这些温度范围内,曾考查试样的断口情况和断裂时的弯曲角度,并与其基体组织的变化相联系,进行讨论。最后,本文指出研究结果在球墨铸铁的应用上所起的作用,以及在球墨铸铁热加工时对于选择热加工温度的意义。     

Two-dimensional fluorescence (excitation/emission) spectroscopy as a probe of complex chemical environments

We report a new application of fluorescence spectroscopy for the identification and characterization of chemical species in complex environments. Simultaneous collection of a dispersed fluorescence spectrum for every step of the laser wavelength results in a two-dimensional spectrum of emission versus excitation wavelengths. This two-dimensional fluorescence (2DF) spectrum yields quick and intuitive assignments of a multitude of peaks in the separate fluorescence excitation and dispersed fluorescence spectra as belonging to the same species. We demonstrate the technique with the measurement of 2DF spectra of a discharge of dilute benzene into a supersonic free jet. A multitude of rovibronic bands due to the C(2) Swan and C(3) comet bands are immediately apparent and even unreported bands can be assigned intuituvely. Custom software filters are employed to enhance or reject emission from one or the other carrier to obtain excitation spectra arising from purely one carrier, or even a specific spectral component of a single carrier. The very characteristic 2DF fingerprints of C(2) and C(3) permit identification of another unidentified species in the discharge that absorbs at 476 nm, coincident with one of the diffuse interstellar bands.