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1.
We report on the first observation and studies of a weak delocalizing logarithmic temperature dependence of the conductivity,
which causes the conductivity of the 2D metal to increase as T decreases down to 16 mK. The prefactor of the logarithmic dependence is found to decrease gradually with density, to vanish
at a critical density n
c
, 2∼2×1012 cm−2, and then to have the opposite sign at n>n
c
,2. The second critical density sets the upper limit on the existence region of the 2D metal, whereas the conductivity at the
critical point, G
c
,2∼120e
2/h, sets an upper (low-temperature) limit on its conductivity.
Pis’ma Zh. éksp. Teor. Fiz. 68, No. 6, 497–501 (25 September 1998)
Published in English in the original Russian journal. Edited by Steve Torstveit. 相似文献
2.
Summary In the analysis of discretization methods for stiff intial value problems, stability questions have received most part of the attention in the past.B-stability and the equivalent criterion algebraic stability are well known concepts for Runge-Kutta methods applied to dissipative problems. However, for the derivation ofB-convergence results — error bounds which are not affected by stiffness — it is not sufficient in many cases to requireB-stability alone. In this paper, necessary and sufficient conditions forB-convergence are determined.This paper was written while J. Schneid was visiting the Centre for Mathematics and Computer Science with an Erwin-Schrödinger stipend from the Fonds zur Förderung der wissenschaftlichen Forschung 相似文献
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D. De Salvador A. Coati E. Napolitani M. Berti A.V. Drigo M.S. Carroll J.C. Sturm J. Stangl G. Bauer L. Lazzarini 《Applied Physics A: Materials Science & Processing》2002,75(6):667-672
In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nm-thick SiGeC
layers buried under a silicon cap layer of 40 nm. The samples were annealed in either inert (N2) or oxidizing (O2) ambient at 850 °C for times ranging from 2 to 10 h. The silicon self-interstitial (I) flux coming from the surface under
oxidation enhances the C diffusion with respect to the N2-annealed samples. In the early stages of the oxidation process, the loss of C from the SiGeC layer by diffusion across the
layer/cap interface dominates. This phenomenon saturates after an initial period (2–4 h), which depends on the C concentration.
This saturation is due to the formation and growth of C-containing precipitates that are promoted by the I injection and act
as a sink for mobile C atoms. The influence of carbon concentration on the competition between precipitation and diffusion
is discussed.
Received: 19 October 2001 / Accepted: 19 December 2001 / Published online: 20 March 2002 / Published online: 20 March 2002 相似文献
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High-speed imaging of phenomena akin to laser lithotripsy is performed. A new method for guiding laser light for the stone destruction is proposed. This is based on a combination of signals obtained from the correlation of fluorescent and ballistic images. 相似文献
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Impact of the internucleotide linkage modification by inserting a methylene group to the P-O bond (—O—PO
2
—
—O— chain changed for —O—PO
2
—
—CH2—O—), on the modified oligonucleotide binding ability to the natural DNA strand was studied by molecular dynamics simulation. Complex of (dT)11 with a deoxyadenosine undecamer containing alternating modified and natural internucleotide linkage was studied as a model system. The Amber force field was completed by a set of new parameters needed to model the modified part of the nucleotide. The simulations confirmed existence of a double-helical complex the melting point of which is considerably higher than 300 K. While the thymidine (unmodified) strand possesses a B-type secondary structure, the conformation of the adenosine (modified) strand is not stable at 300 K. The -ggt conformation of the modified linkages is highly preferred, temporary jumps to the -g-gt and ggt conformations were, however, observed. 相似文献
10.