Study of the Surface Processes in Vapor-Phase Epitaxial GaAs: Asymmetric Trapping of Atoms at the Step

Experimental proofs of asymmetric trapping of atoms at the growth step in vapor-phase epitaxy of gallium arsenide in the GaAs–AsCl₃–H₂ system are given. The data obtained confirm the important role of the surface diffusion mass transfer in the growth of epitaxial GaAs layers on vicinals in the neighborhood of (111)A. The effective diffusion length is estimated.     

Effect of the Arsenic Concentration on the Characteristics of the Growth Step Echelon in GaAs Epitaxy

The effect of the arsenic concentration in the vapor phase on the growth step distribution over the surface of GaAs epitaxial layers grown in a chlorine-hydride vapor-transport system on substrates with 4° (111)A and (113)A orientations is studied. It is demonstrated that the average distance between steps in the echelon depends on the arsenic concentration and increases with it up to a certain constant value. It is assumed that this is connected with the change in the kink density at the steps.     

Synthesis of 4-Pyridyl-2,3-dihydro-1H-1,5-benzodiazepin-2-ones

4-Pyridyl-2,3-dihydro-1H-1,5-benzodiazepin-2-ones were obtained by the condensation of ethyl nicotinoyl- or isonicotinoylacetates with o-phenylenediamine. Alkylation of the pyridylbenzodiazepinones with ethyl iodide under phase-transfer catalysis conditions occurred at the amide nitrogen of the heterocycle, whereas in nitromethane it occurred at the nitrogen of the pyridine substituent. Bromination with N-bromosuccinimide occurred at position 3 of the heterocycle. Pyridyldibenzodiazepinones underwent thermal rearrangement to derivatives of vinylbenzimidazole.     

C-Phosphorylation of Electron-Rich Heterocycles

Abstract

C-phosphorylation of pyrrole, furan, thiophene derivatives and their benzanalogs by phosphorus tribromide has been studied. Perspective methods for involving trivalent phosphorus residues at a different position of the rings have been developed. Unknown early the heterocycle's derivatives with tri- and tetracoordinated phosphorus substituents (1–5) and novel types of phosphoruscontaining heterocycles (6,7) have been obtained.     

Investigation of transitional layers in epitaxial gallium arsenide: Micromorphology and electron distribution in the layers,in dependence on the growth time in an iodine system

Layers of gallium arsenide with orientation 2° from (111) A in the (110) direction were grown by the open iodide method. A study was made of the morphology, (electron microscope) micromorphology, differential growth rate, and doping level of the layers in dependence on the growth time (1–180 min). The effect of special features of the growth mechanism on the appearance of transitional layers in the doping level is appraised.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 63–69, February, 1973.     

Interaction of push–pull tert-enamines with phenylglyoxal

Abstract  

The reaction of push–pull enamines with 1,2-biselectrophilic phenylglyoxal was investigated. Phenylglyoxal was found to react depending on the structure of the push–pull enamine, affording either a hydroxyalkylation product at the methyl group or the cyclic product via participation of the methyl group and the β-carbon of the enamine.