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1.
Suppose there exists a global solution u to the incompressible Navier–Stokes equations, such that u∈Ct(H?1/2). We prove that its H?1/2 norm goes to 0 at infinity. We next use this fact to control the L2t(H?3/2) norm of u, and finally we prove that such a solution is stable. To cite this article: I. Gallagher et al., C. R. Acad. Sci. Paris, Ser. I 334 (2002) 289–292.  相似文献   
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The asymptotic behaviour of a Stokes flow with Tresca free boundary friction conditions when one dimension of the fluid domain tends to zero is studied. A specific Reynolds equation associated with variational inequalities is obtained and uniqueness is proved.  相似文献   
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At bromide concentrations higher than 0.1 M, a second term must be added to the classical rate law of the bromate–bromide reaction that becomes ?d[BrO3?]/dt = [BrO3?][H+]2(k1[Br?] + k2[Br?]2). In perchloric solutions at 25°C, k1 = 2.18 dm3 mol?3 s?1 and k2 = 0.65 dm4 mol?4 s?1 at 1 M ionic strength and k1 = 2.60 dm3 mol3 s?1and k2 = 1.05 dm4 mol?4 s?1 at 2 M ionic strength. A mechanism explaining this rate law, with Br2O2 as key intermediate species, is proposed. Errors that may occur when using the Guggenheim method are discussed. © 2006 Wiley Periodicals, Inc. Int J Chem Kinet 39: 17–21, 2007  相似文献   
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The spectral dynamics of a mid-infrared multimode Cr(2+):ZnSe laser located in a vacuum sealed chamber containing acetylene at low pressure is analyzed by a stepping-mode high-resolution time-resolved Fourier transform interferometer. Doppler-limited absorption spectra of C(2)H(2) in natural isotopic abundance are recorded around 4000 cm(-1) with kilometric absorption path lengths and sensitivities better than 3 10(-8) cm(-1). Two cold bands are newly identified and assigned to the ν(1)+ν(4) (1) and ν(3)+ν(5) (1) transitions of (12)C(13)CH(2). The ν(1)+ν(5) (1) band of (12)C(2)HD and fourteen (12)C(2)H(2) bands are observed, among which for the first time ν(2)+2ν(4) (2)+ν(5) (-1).  相似文献   
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We present in this paper a domain decomposition method to treat faults in geological basin modeling. The particularity of this model is that the faults whose widths are very small in comparison with the basin size, are not characterized as subdomains any more but as interfaces between sedimentary blocks. The originality of this work lies in the formulation of this new fault model and in the definition and the computation of the interface conditions between the subdomains. To cite this article: E. Flauraud et al., C. R. Mecanique 331 (2003).  相似文献   
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This study provides a stability theory for the nonlinear least-squares formulation of estimating the diffusion coefficient in a two-point boundary-value problem from an error-corrupted observation of the state variable. It is based on analysing the projection of the observation on the nonconvex attainable set.This research was started while G. Chavent visited the Technical University of Graz. Support through the Steiermaerkische Landesregierung is gratefully acknowledged.  相似文献   
10.
Molecule-to-metal bonds: electrografting polymers on conducting surfaces.   总被引:1,自引:0,他引:1  
Electrografting is a powerful and versatile technique for modifying and decorating conducting surfaces with organic matter. Mainly based on the electro-induced polymerization of dissolved electro-active monomers on metallic or semiconducting surfaces, it finds applications in various fields including biocompatibility, protection against corrosion, lubrication, soldering, functionalization, adhesion, and template chemistry. Starting from experimental observations, this Review highlights the mechanism of the formation of covalent metal-carbon bonds by electro-induced processes, together with major applications such as derivatization of conducting surfaces with biomolecules that can be used in biosensing, lubrication of low-level electrical contacts, reversible trapping of ionic waste on reactive electrografted surfaces as an alternative to ion-exchange resins, and localized modification of conducting surfaces, a one-step process providing submicrometer grafted areas and which is used in microelectronics.  相似文献   
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