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In the last decade, catalytic chemical vapor deposition (CVD) has been intensively explored for the growth of single-layer graphene (SLG). Despite the scattering of guidelines and procedures, variables such as the surface texture/chemistry of catalyst metal foils, carbon feedstock, and growth process parameters have been well-scrutinized. Still, questions remain on how best to standardize the growth procedure. The possible correlation of procedures between different CVD setups is an example. Here, two thermal CVD reactors were explored to grow graphene on Cu foil. The design of these setups was entirely distinct, one being a “showerhead” cold-wall type, whereas the other represented the popular “tubular” hot-wall type. Upon standardizing the Cu foil surface, it was possible to develop a procedure for cm2-scale SLG growth that differed only by the carrier gas flow rate used in the two reactors.  相似文献   
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Optics and Spectroscopy - Scattering of light by disordered structures is normally detrimental to their applicability in many optoelectronic devices. However, some micro and nanostructures are...  相似文献   
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In this paper, we investigate the evolution of joint invariants under invariant geometric flows using the theory of equivariant moving frames and the induced invariant discrete variational complex. For certain arc length preserving planar curve flows invariant under the special Euclidean group , the special linear group , and the semidirect group , we find that the induced evolution of the discrete curvature satisfies the differential‐difference mKdV, KdV, and Burgers' equations, respectively. These three equations are completely integrable, and we show that a recursion operator can be constructed by precomposing the characteristic operator of the curvature by a certain invariant difference operator. Finally, we derive the constraint for the integrability of the discrete curvature evolution to lift to the evolution of the discrete curve itself.  相似文献   
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An abstract scheme using particular types of relations on filters leads to general unifying results on stability under supremum and product of local topological properties. We present applications for Fréchetness, strong Fréchetness, countable tightness and countable fan-tightness, some of which recover or refine classical results, some of which are new. The reader may find other applications as well.  相似文献   
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Confined excitons in non-abrupt GaAs/AlxGa1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.  相似文献   
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It is shown that, if t is an integer ≥3 and not equal to 7 or 8, then there is a unique maximal graph having the path Pt as a star complement for the eigenvalue ?2. The maximal graph is the line graph of Km,m if t = 2m?1, and of Km,m+1 if t = 2m. This result yields a characterization of L(G ) when G is a (t + 1)‐vertex bipartite graph with a Hamiltonian path. The graphs with star complement PrPs or PrCs for ?2 are also determined. © 2003 Wiley Periodicals, Inc. J Graph Theory 43: 137–149, 2003  相似文献   
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Anilinepropylsilica xerogel was obtained by using an appropriate organosilane and tetraethyl orthosilicate as precursor reagents. The gelation was carried out using HF and NaF as catalysts. The presence of Na+ (when NaF was used) resulted in a decrease in the final organic content of the materials. This effect was interpreted as an inhibition of the organosilane polycondensation possibly due to the Na+ interaction with the SiO- groups of the hydrolyzed organosilane. The presence of Na+ also results in morphological changes in the xerogels.  相似文献   
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