A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN-based high-frequency power electronics

Metal–organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 × 10⁸ cm⁻² for Sample B with a lattice-matched In_0.17Al_0.83N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness. The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).     

Characterization,slab-pair modeling and phase analysis of circular fishnet metamaterials

Planar metamaterials, which have incident to normal plane excitation unlike SRR-type structures and that are easily fabricated in multilayer form, have received great interest in recent years. In this paper, one-dimensional and polarization independent circular fishnet metamaterials and their equivalent discontinuous slab-pair modeling for tuning resonance frequencies are introduced. After the numerical and experimental demonstration of the inclusions, the standard retrieval characterization methods and the correspondent/related backward-wave propagation observation are realized in order to check the physical explanation mentioned in the paper. In addition, a detailed phase analysis is performed in order to demonstrate the application of the suggested structure as a phase compensator.     

Building an Iron Chromophore Incorporating Prussian Blue Analogue for Photoelectrochemical Water Oxidation

The replacement of traditional ruthenium-based photosensitizers with low-cost and abundant iron analogs is a key step for the advancement of scalable and sustainable dye-sensitized water splitting cells. In this proof-of-concept study, a pyridinium ligand coordinated pentacyanoferrate(II) chromophore is used to construct a cyanide-based CoFe extended bulk framework, in which the iron photosensitizer units are connected to cobalt water oxidation catalytic sites through cyanide linkers. The iron-sensitized photoanode exhibits exceptional stability for at least 5 h at pH 7 and features its photosensitizing ability with an incident photon-to-current conversion capacity up to 500 nm with nanosecond scale excited state lifetime. Ultrafast transient absorption and computational studies reveal that iron and cobalt sites mutually support each other for charge separation via short bridging cyanide groups and for injection to the semiconductor in our proof-of-concept photoelectrochemical device. The reorganization of the excited states due to the mixing of electronic states of metal-based orbitals subsequently tailor the electron transfer cascade during the photoelectrochemical process. This breakthrough in chromophore-catalyst assemblies will spark interest in dye-sensitization with robust bulk systems for photoconversion applications.     

Optically implemented broadband blueshift switch in the terahertz regime

We experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2. The observed tuning range of the fabricated device is as high as 26% (from 0.76 THz to 0.96 THz) through optical control to silicon. The realization of broadband blueshift tunable metamaterial offers opportunities for achieving switchable metamaterials with simultaneous redshift and blueshift tunability and cascade tunable devices. Our experimental approach is compatible with semiconductor technologies and can be used for other applications in the THz regime.     

Study of the field emitted by a source placed inside a two-dimensional left-handed metamaterial

We studied the properties of electromagnetic waves that were emitted from a source placed inside a left-handed medium based on a two-dimensional labyrinth. While the arguments of geometrical optics suggest that the field emitted from the source would be focused outside the left-handed medium no matter where the source was placed, our results proved the contrary. We found that the field emitted from the source was focused outside the left-handed medium when the source was placed inside the medium at a certain distance away from the interface. Moreover, our results showed that the field emitted from the source was focused on the subwavelength dimensions outside the left-handed medium.     

Physics and applications of photonic crystals

In this article, we investigate how the photonic band gaps and the variety of band dispersions of photonic crystals can be utilized for various applications and how they further give rise to completely novel optical phenomena. The enhancement of spontaneous emission through coupled cavity waveguides in a one-dimensional silicon nitride photonic microcrystal is investigated. We then present the highly directive radiation from sources embedded in two-dimensional photonic crystals. The manifestation of novel and intriguing optical properties of photonic crystals are exemplified experimentally by the negative refraction and the focusing of electromagnetic waves through a photonic crystal slab with subwavelength resolution.     

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

The two-dimensional (2D) electron energy relaxation in Al_0.25Ga_0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T_e) of hot electrons was obtained from the lattice temperature (T_L) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T_e > 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al_0.25Ga_0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.     

Broadband circular polarizer based on high-contrast gratings

A circular polarizer, which is composed of periodic and two-dimensional dielectric high-contrast gratings, is designed theoretically such that a unity conversion efficiency is achieved at λ(0)=1.55 μm. The operation is obtained by the achievement of the simultaneous unity transmission of transverse magnetic and transverse electric waves with a phase difference of π/2, meaning that an optimized geometrical anisotropy is accomplished. By the utilization of the rigorous coupled-wave analysis and finite-difference time-domain methods, it is shown that a percent bandwidth of ～50% can be achieved when the operation bandwidth is defined as the wavelengths for which the conversion efficiency exceeds 0.9.     

Simulation and micro-fabrication of optically switchable split ring resonators

The effect of conductivity variation as a proposed method for the investigation of photoconductive switching properties of split ring resonators (SRRs) is simulated. Three different systems that are applicable under certain fabrication and/or optical excitation conditions are described. The simulated transmission spectrum indicates that for a large range of dark conductivity values, complete switching of the SRR resonance is possible. One of the simulated systems, involving split ring resonators on Si substrate, was fabricated and characterized. The transmission spectrum of that system was measured, with the Si in its high-resistivity state, and a −60 dB dip between 108 and 115 GHz, due to SRRs magnetic resonance, was observed.