Deep neural network analysis of nanoparticle ordering to identify defects in layered carbon materials

Smoothness/defectiveness of the carbon material surface is a key issue for many applications, spanning from electronics to reinforced materials, adsorbents and catalysis. Several surface defects cannot be observed with conventional analytic techniques, thus requiring the development of a new imaging approach. Here, we evaluate a convenient method for mapping such “hidden” defects on the surface of carbon materials using 1–5 nm metal nanoparticles as markers. A direct relationship between the presence of defects and the ordering of nanoparticles was studied experimentally and modeled using quantum chemistry calculations and Monte Carlo simulations. An automated pipeline for analyzing microscopic images is described: the degree of smoothness of experimental images was determined by a classification neural network, and then the images were searched for specific types of defects using a segmentation neural network. An informative set of features was generated from both networks: high-dimensional embeddings of image patches and statics of defect distribution.

Defectiveness of carbon material surface is a key issue for many applications. Pd-nanoparticle SEM imaging was used to highlight “hidden” defects and analyzed by neural networks to solve order/disorder classification and defect segmentation tasks.     

Infrared absorption and electron paramagnetic resonance studies of vinyl radical in noble-gas matrices

Vinyl radicals produced by annealing-induced reaction of mobilized hydrogen atoms with acetylene molecules in solid noble-gas matrices (Ar, Kr, and Xe) were characterized by Fourier transform infrared and electron paramagnetic resonance (EPR) spectroscopies. The hydrogen atoms were generated from acetylene by UV photolysis or fast electron irradiation. Two vibrational modes of the vinyl radical (nu7 and nu5) were assigned in IR absorption studies. The assignment is based on data for various isotopic substitutions (D and 13C) and confirmed by comparison with the EPR measurements and density-functional theory calculations. The data on the nu7 mode is in agreement with previous experimental and theoretical results whereas the nu5 frequency agrees well with the computational data but conflicts with the gas-phase IR emission results.     

Dynamic response of the spherical pendulum subjected to horizontal Lissajous excitation

Nonlinear Dynamics - This paper examines the oscillations of a spherical pendulum with horizontal Lissajous excitation. The pendulum has two degrees of freedom: a rotational angle defined in the...     

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10⁻⁴ Torr to 3 × 10⁻² Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 10¹⁷ cm⁻³ to (42.64 ± 4.46) × 10¹⁷ cm⁻³, electron mobility from 0.25 ± 0.03 cm²/(V·s) to 7.12 ± 1.32 cm²/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 10⁶ Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 10³ Ω, and the ratio R_HRS/R_LRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.     

Molecular Structure,Thermodynamic and Spectral Characteristics of Metal-Free and Nickel Complex of Tetrakis(1,2,5-thiadiazolo)porphyrazine

The Knudsen effusion method with mass spectrometric control of the vapor composition was used to study the possibility of a congruent transition to the gas phase and to estimate the enthalpy of sublimation of metal-free tetrakis(1,2,5-thiadiazolo)porphyrazine and its nickel complex (H₂TTDPz and NiTTDPz, respectively). The geometrical and electronic structure of H₂TTDPz and NiTTDPz in ground and low-lying excited electronic states were determined by DFT calculations. The electronic structure of NiTTDPz was studied by the complete active space (CASSCF) method, following accounting dynamic correlation by multiconfigurational quasi-degenerate second-order perturbation theory (MCQDPT2). A geometrical structure of D_2h and D_4h symmetry was obtained for H₂TTDPz and NiTTDPz, respectively. According to data obtained by the MCQDPT2 method, the nickel complex possesses the ground state ¹A_1g, and the wave function of the ground state has the form of a single determinant. Electronic absorption and vibrational (IR and resonance Raman) spectra of H₂TTDPz and NiTTDPz were studied experimentally and simulated theoretically.     

Discrimination Between B-Processes is Impossible

Two series of binary observations x ₁,x ₁,… and y ₁,y ₂,… are presented: x _n and y _n are given at each time n∈ℕ. It is assumed that the sequences are generated independently of each other by two B-processes. The question of interest is whether the sequences represent a typical realization of two different processes or of the same one. It is demonstrated that this is impossible to decide, in the sense that every discrimination procedure is bound to err with non-negligible frequency when presented with sequences from some B-processes. This contrasts with earlier positive results on B-processes, in particular, those showing that there are consistent [`(d)]\bar{d} -distance estimates for this class of processes, and on ergodic processes, in particular, those establishing consistent change point estimates.     

Stability of the C *-Algebra Associated with Twisted CCR

The universal enveloping C ^*-algebra A of twisted canonical commutation relations is considered. It is shown that, for any (–1,1), the C ^*-algebra A is isomorphic to the C ^*-algebra A ₀ generated by partial isometries t _i ,t _i ^*,i=1,¨,d satisfying the relations t _i ^* t _j = _ij (1– _k<i t _k t _k ^*), t _j t _i =0, ij and it is proved that the Fock representation of A is faithful.     

Stability of a Special Class of $$q_{ij}$$ -CCR and Extensions of Higher-Dimensional Noncommutative Tori

The -algebras A_{{q i}}, generated by generalised quon commutation relations are considered. The nuclearity of these algebras is proved. It is shown that A_{{q i}}, is isomorphic to the extension of a higher-dimensional noncommutative torus. Irreducible representations of A_{{q i}}, are considered. It is shown that the Fock representation is faithful.