Optical properties of Fe-doped silica films on Si

Optical properties of Fe-doped silica films on Si were investigated by ellipsometric technique in the region 1-5 eV. Samples were produced by sol-gel method. Precursors were prepared by mixing tetraethoxysilane (TEOS) solution in ethanol and water with aqueous solution of Fe-chloride or Fe-acetate. The coating solution was deposited on Si substrates by spin on technique. The size of Fe-containing nanometric-sized particles depended on technology and varied from 20 to 100 nm. Optical response of complex hybrid samples SiO₂:Fe/Si was interpreted in a multi-layer model. In the inverse problem, the Maxwell equations were solved by transfer matrix technique. Dielectric function of Fe-doped silica layers was calculated in the model of effective media. Analysis of optical data has shown that various Fe-oxides formed. Experimental data for films obtained from precursors with Fe-acetate and annealed in hydrogen were well described by the model calculations taking into account a small contribution 1-5% of metal Fe imbedded in silica. The Fe/Fe-O contribution to optical response increased for samples grown from FeCl₃-precursor. Ellipsometric data for Fe-doped silica films on Si were interpreted taking into account the structural AFM studies as well as the results of magnetic measurements.     

The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots

We report on low-temperature microphotoluminescence (μ-PL) measurements of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field. It is demonstrated that the QDs’ PL signal could be increased severalfold by altering the external and/or the internal electric field, which could be changed by an additional infrared laser. A model which accounts for a substantially faster lateral transport of the photoexcited carriers achieved in an external electric field is employed to explain the observed effects. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity measured in our experiment—a finding which could be used to tailor the properties of QD-based optoelectronic applications. The text was submitted by the authors in English.     

High-Throughput Screening of Ten Microcystins and Nodularins, Cyanobacterial Peptide Hepatotoxins, by Reversed-Phase Liquid Chromatography-Electrospray Ionisation Mass Spectrometry

Liquid chromatography-electrospray ionisation mass spectrometry was evaluated in the high-throughput analysis of microcystins and nodularins, cyanobacterial peptide hepatotoxins. Extracts originating from cyanobacterial strains and field material were separated on a 30 mm × 4 mm I.D. Merck Purospher STAR RP-18e column using a rapid gradient of aqueous formic acid and acetonitrile, ionised by electrospray technique and analysed on a Micromass Quattro II triple-quadrupole mass spectrometer operated in the selected ion recording (SIR) mode. The total analysis time per sample was 2.8 min corresponding to 514 samples a day. The system showed good robustness during a series of 320 repetitive injections of a field sample containing three major microcystins.     

The π N → e +e−N reaction close to the vector-meson production threshold

The π^? p→e ⁺ e ^? n and π⁺ n→e ⁺ e ^? p reaction cross sections are calculated below and in the vicinity of the vector-meson (?⁰,ω) production threshold. These processes are largely responsible for the emission of e ⁺e^? pairs in pion-nucleus reactions and contribute to the dilepton spectra observed in relativistic heavy ion collisions. They are dominated by the decay of low-lying baryon resonances into vector-meson-nucleon channels. The vector mesons materialize subsequently into e ⁺ e^? pairs. Using πN→?⁰ N and πN→ωN, amplitudes calculated in the center of mass energy interval 1.4 < √s<1.8 GeV, we compute the π^? p→e ⁺ e ^? n and π⁺ n→e ⁺ e ^? p reaction cross sections in these kinematics. Below the vector-meson production threshold, the π⁰?ω interference in the e ⁺ e^? channel appears largely destructive for the π^? p→e ⁺ e ^? n cross section and constructive for the π⁺ n→e ⁺ e ^? p cross section. The pion beam and the HADES detector at GSI offer a unique possibility to measure these effects. Such data would provide strong constraints on the coupling of vector-meson-nucleon channels to low-lying baryon resonances.     

Mg 2p shallow core-level and local atomic structure of i-ZnMgRE quasicrystals

We present a detailed analysis of the Mg 2p shallow core-levels measured on icosahedral single-grain ZnMgY, ZnMgHo, and ZnMgEr quasicrystals during a photoelectron microscopy study. The synchrotron radiation photoemission measurements were performed on in situ cleaved samples at a pressure of 10⁻¹⁰ mbar and at low temperature, typically 90-150 K. The Mg 2p photoemission lines are essentially broadened as compared to those of the Mg 2p spin-orbit doublet recorded on the Zn₂Mg crystalline Laves phase. The broadening is associated to the coordination shifts of the Mg 2p level due to the inequivalent magnesium sites in the quasicrystalline lattice. The coordination shifts are calculated on the basis of i-ZnMg(Ho, Y) atomic structure data, recently determined from the pair distribution function analysis. The coordination shifts obtained are up to 0.2 eV. The Mg 2p experimental spectral intensity is nicely reproduced by a superposition of coordination-shifted Mg 2p spin-orbit doublets.     

Quantum correlations in dual quantum measurements

 We analyze the quantum measurement properties of dual non-degenerate parametric amplifers in the twin-beam configuration, in the cascaded back-action-evasion configuration, and in Kerr-type photon-number quantum non-demolition measurements. It is found that Einstein-Podolsky-Rosen correlations can be obtained between the quadrature components of an idler mode and the sum of the readout of two signal modes. Furthermore, we discuss dual-mode quantum non-demolition measurements on the combination of two light modes, and the generation of number-state entanglement. Received: 12 April 1996/Revised version: 2 July 1996     

Quantum diffusion of positive muons

Recent studies of the diffusion of positive muons in metals, particularly aluminium, are reviewed. At low temperatures, quantum tunnelling is an important process for the mobility of the muons and experiments aimed at the study of tunnelling in the presence of phonons and conduction electrons are discussed. The concept of quantum diffusion is introduced and the conditions for quantum diffusion and quantum propagation (i.e. band-like motion) in normal and superconducting metals are compared.