Atmospheric chemistry of diazomethane – an experimental and theoretical study

The kinetics of the O₃, OH and NO₃ radical reactions with diazomethane were studied in smog chamber experiments employing long-path FTIR and PTR-ToF-MS detection. The rate coefficients were determined to be k _CH2NN+O3?=?(3.2?±?0.4)?×?10^?17 and k _CH2NN+OH?=?(1.68?±?0.12)?×?10^?10 cm³ molecule^?1 s^?1 at 295?±?3?K and 1013?±?30 hPa, whereas the CH₂NN?+?NO₃ reaction was too fast to be determined in the static smog chamber experiments. Formaldehyde was the sole product observed in all the reactions. The experimental results are supported by CCSD(T*)-F12a/aug-cc-pVTZ//M062X/aug-cc-pVTZ calculations showing the reactions to proceed exclusively via addition to the carbon atom. The atmospheric fate of diazomethane is discussed.     

Logarithmic temperature dependence of the conductivity of the two-dimensional metal

We report on the first observation and studies of a weak delocalizing logarithmic temperature dependence of the conductivity, which causes the conductivity of the 2D metal to increase as T decreases down to 16 mK. The prefactor of the logarithmic dependence is found to decrease gradually with density, to vanish at a critical density n _c , 2∼2×10¹² cm⁻², and then to have the opposite sign at n>n _c ,2. The second critical density sets the upper limit on the existence region of the 2D metal, whereas the conductivity at the critical point, G _c ,2∼120e ²/h, sets an upper (low-temperature) limit on its conductivity. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 6, 497–501 (25 September 1998) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection

In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nm-thick SiGeC layers buried under a silicon cap layer of 40 nm. The samples were annealed in either inert (N₂) or oxidizing (O₂) ambient at 850 °C for times ranging from 2 to 10 h. The silicon self-interstitial (I) flux coming from the surface under oxidation enhances the C diffusion with respect to the N₂-annealed samples. In the early stages of the oxidation process, the loss of C from the SiGeC layer by diffusion across the layer/cap interface dominates. This phenomenon saturates after an initial period (2–4 h), which depends on the C concentration. This saturation is due to the formation and growth of C-containing precipitates that are promoted by the I injection and act as a sink for mobile C atoms. The influence of carbon concentration on the competition between precipitation and diffusion is discussed. Received: 19 October 2001 / Accepted: 19 December 2001 / Published online: 20 March 2002 / Published online: 20 March 2002     

On Certain Perturbations of the Erdös–Renyi Random Graph

We study perturbations of the Erdös–Renyi model for which the statistical weight of a graph depends on the abundance of certain geometrical patterns. Using the formal correspondance with an exactly solvable effective model, we show the existence of a percolation transition in the thermodynamical limit and derive perturbatively the expression of the threshold. The free energy and the moments of the degree distribution are also computed perturbatively in that limit and the percolation criterion is compared with the Molloy–Reed criterion.     

Stochastic control problems with delay

We consider optimal control problems for systems described by stochastic differential equations with delay. We state conditions for certain classes of such systems under which the stochastic control problems become finite-dimensional. These conditions are illustrated with three applications. First, we solve some linear quadratic problems with delay. Then we find the optimal consumption rate in a financial market with delay. Finally, we solve explicitly a deterministic fluid problem with delay which arises from admission control in ATM communication networks.