A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications

We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors (HEMTs) with thin-barrier to minimize surface leakage current to enhance the breakdown voltage. The bilayer SiN with 20-nm Si-rich SiN and 100-nm Si$_{3}$N$_{4}$ was deposited by plasma-enhanced chemical vapor deposition (PECVD) after removing 20-nm SiO$_{2}$ pre-deposition layer. Compared to traditional Si$_{3}$N$_{4}$ passivation for thin-barrier AlGaN/GaN HEMTs, Si-rich SiN bilayer passivation can suppress the current collapse ratio from 18.54% to 8.40%. However, Si-rich bilayer passivation leads to a severer surface leakage current, so that it has a low breakdown voltage. The 20-nm SiO$_{2}$ pre-deposition layer can protect the surface of HEMTs in fabrication process and decrease Ga-O bonds, resulting in a lower surface leakage current. In contrast to passivating Si-rich SiN directly, devices with the novel Si-rich SiN bilayer passivation increase the breakdown voltage from 29 V to 85 V. Radio frequency (RF) small-signal characteristics show that HEMTs with the novel bilayer SiN passivation leads to $f_{\rm T}/f_{\rm max}$ of 68 GHz/102 GHz. At 30 GHz and $V_{\rm DS} = 20$ V, devices achieve a maximum $P_{\rm out}$ of 5.2 W/mm and a peak power-added efficiency (PAE) of 42.2%. These results indicate that HEMTs with the novel bilayer SiN passivation can have potential applications in the millimeter-wave range.     

高效液相色谱法同时测定碳酸饮料中4种甜味剂

正甜味剂是食品添加剂的重要组成部分,主要用于食品中甜味的调节~([1])。但是,甜味剂的过量使用对人体有一定的危害,消费者也容易忽略超限的甜味剂对身体可能带来的危害~([2-3])。因此,对甜味剂的定性定量检测尤为重要。食品中甜味剂的测定方法有分光光度法~([4-5])、高效液相色谱-串联质谱法~([6])、高效液相色谱法~([7])等。分光光度法所需仪器设备简单,成本低廉,但是灵敏度不高。液相色谱-质谱法已经广泛用于食品中的甜味剂检测,具有灵敏度高,