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镓在裸Si系和SiO2/Si系掺杂效应 总被引：3，自引：0，他引：3
Based on the diffusion action of gallium in silicon and SiO2 ,a diffusion model of gallium doping in bare silicon system and SiO_2/Si system is first presented in this paper ,the gallium doping effect in the two systems is analyzed theoretically. Experiments and applications have proved that the use of the open-tube gallium deffusion in SiO2/Si system can substantially improve diffusion quality and device characteristics . 相似文献
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