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用光电化学电流法研究了铅、铅砷、铅锑和铅铋合金在4.5mol·L-1H2SO4溶液(22℃)中,以0.9V(vs.Hg/Hg2SO4)极化7h而形成的阳极膜中的氧化铅的半导体性质,合金添加剂砷、锑和铋对t-PbO(四方氧化铝)和o-PbO(斜方氧化铝)的禁带宽度没有影响,从量子效率和电位的关系可求Pb,Pb-lat%As(at%表示原子百分比,全文同),Pb-lat%Sb和Sb-lat%Bi上膜中t-Pbo的施主密度(ND)分别为9.3×1015,1.0×1016,3.1×1016和1.3×1017cm-3,平带位分别为-0.20,-0.22,-0.28和-0.08V(vs.Hg/Hg2SO4).比较VA元素砷、锑和铋对上述膜中t-Pbo的ND(从而自由电子密度)和膜中t-Pbo的生长速率的影响,可认为法添加剂砷、锑和铋对阳极膜中t-Pbo的作用符合Hauffe规则. 相似文献
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用交流阻抗法研究了铅、铅砷、铅锑和铅铋金在4.5 mol·L~(-1) H_2SO_4溶液(20 ℃)中,以0.9 V(vs.Hg/Hg_2SO_4)极化2 h而形成的阳极膜的半导体性质.根据Mott-Schottky图,此种膜为n型半导体.pb,pb-lat%As,Pb-lat%Sb和Sb-lat%Bi上膜的平带电位分别为-0.95,-1.1, -1.0,-1.1 V(vs. Hg/Hg_2SO_4);相应的施主密度分别为0.82×10~(16),2.6×10~(16),1.2×10~(17)和0.71×10~(16) cm~(-3). 相似文献
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VA族元素对阳极铅(II)氧化物膜半导体性质的影响(II) 总被引:1,自引:0,他引:1
用光电化学电流法研究了铅、铅砷、铅锑和铅铋合金在4.5 mol·L~(-1) H_2SO_4溶液(22 ℃)中,以0.9 V(vs.Hg/Hg_2SO_4)极化7 h而形成的阳极膜中的氧化铅的半导体性质,合金添加剂砷、锑和铋对t-PbO(四方氧化铝)和o-PbO(斜方氧化铝)的禁带宽度没有影响,从量子效率和电位的关系可求Pb,Pb-lat%As(at%表示原子百分比,全文同),Pb-lat%Sb和Sb-lat%Bi上膜中t-Pbo的施主密度(N_D)分别为9.3×10~(15),1.0×10~(16),3.1×10~(16)和1.3×10~(17) cm~(-3),平带位分别为-0.20,-0.22,-0.28和-0.08 V(vs.Hg/Hg_2SO_4).比较VA元素砷、锑和铋对上述膜中t-PbO的N_D(从而自由电子密度)和膜中t-PbO的生长速率的影响,可认为法添加剂砷、锑和铋对阳极膜中t-PbO的作用符合Hauffe规则. 相似文献
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应用交流阻抗方法研究锑在0.005mol.dm^-^3SO~4+0.5mol.dm^-^3Na~2So~4溶液(30℃)中以0.9V(vs.Hg/Hg~2SO~4/0.005mol.dm^3SO~4)生长3h的阳极Sb~2O~3膜的半导体性质.从Mott-schottky曲线可知.此膜 为n型半导体.平带电位为-0.34v(vs.Hg/Hg~2SO~4/0.005mol.dm^-^3SO~4).施主密度为4.0×19^1^9cm^-^3.讨论了锑增加铅锑合金极PbⅡ氧化物膜施主密度的原因. 相似文献
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The effects of sq. wave potential on the growth rate of the anodic films on Pb-7 Sb and Pb-5 Sb-0.2 As in 4.5 mol/dm3 H2SO4 at 30?were studied by a cathodic linear potential sweep method. By applying the sq. wave potential with period of 3600 s, the potentials of the lead alloys were cycled between that corresponding to the charged conditions of a Pb-acid battery (3 different charge potentials were studied: 1.4, 1.3 and 1.2 V vs. Hg/Hg2SO4, resp.) and that to the discharged condition (1.0 V). The anodic films contain grains with many voids among them as observed with SEM. The surface layer of the grain is PbO2, however, the major constituent of the grain is probably PbO.PbSO4. The relation between the quantity of electricity used to form PbO.PbSO4 and the no. of charges is linear for a certain no. of charge-discharge cycles. The conductance of the film is mainly due to the high conductivity of the PbO2 boundary layers of the grains, especially when the grains are in close contact with one another under pressure. 相似文献
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应用交流阻抗方法研究锑在0.05mol.dm~(-3)H_2SO_4十0.5mol.dm~(-3)Na_2SO_4溶液(30℃)中以0.9V(vs.Hg/Hg_2SO_4/0.05mol. dm~(-3)H_2SO_4)生长3h的阳极Sb_2O_3膜的半导体性质.从Mott-Schottky曲线可知,此膜为n型半导体,平带电位为-0.34V(vs.Hg/Hg_2SO_4/0.05mol.dm~(-3)H_2SO_4),施主密度为4.0×10~(19)cm~(-3).讨论了锑增加铅锑合金阳极Pb(Ⅱ)氧化物膜施主密度的原因. 相似文献
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