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排序方式: 共有1401条查询结果,搜索用时 15 毫秒
1.
《Operations Research Letters》2021,49(4):548-552
In this paper, we employ an asymptotic assumption to show that the maximum of finitely many convex polynomials is an asymptotically well behaved function. We also give two examples to illustrate our main result. As an application, we reproduce some known results appeared recently in the literature. 相似文献
2.
《Arabian Journal of Chemistry》2022,15(11):104286
Studies show that after acidizing operation of oil wells using the alkali/surfactant/polymer (ASP) flooding technology, the produced fluid is emulsified. Since the produced emulsion is stable, it affects the oil–water separation performance. In order to analyze the generation of stable emulsion in the produced fluid after acidizing an oil well, innovative separation experiments were carried out on real oil wells. During the experiments, solid particles in the middle layer of the emulsifying system in the produced fluid after acidizing ASP flooding were extracted and characterized. The generation of the stable emulsifying system in the produced fluid was studied through stability experiments and molecular dynamics simulations. The results showed that the synergistic effect of ferrous sulfide nanoparticles and surfactants was the fundamental reason for the strong emulsifying stability of the produced liquid after acidizing of the ternary composite system. The generation of ferrous sulfide solid particles mainly included two steps. First, sulfate reducing bacteria in injected water by ASP flooding reacted with sulfate in formation water to form hydrogen sulfide. Then, the hydrogen sulfide reacted with iron metal in oil wells and casing of wellbore to form ferrous sulfide particles. It was found that surfactants are adsorbed on the surface of ferrous sulfide nanoparticles. Subsequently, the control ability of surfactant on oil and water phases in the liquid film was enhanced. The performed analyses demonstrate that the adsorption of solid particles to the oil phase was enhanced, while the free motion of molecules in the oil phase at the liquid film position was weakened. The strength of the interfacial film between oil and water was further increased by the synergistic effect of ferrous sulfide nanoparticles and surfactant. The present study is expected to provide a guideline for a better understanding of the efficient treatment of produced fluids in ASP flooding. 相似文献
3.
铁电材料拥有自发电极化, 不同的极化方向会对异质结的电子结构产生可逆的和非易失性的影响. 本工作采用分子束外延技术在二维铁电材料α-In2Se3 衬底上成功制备了 Pb 纳米岛构建 Pb/α-In2Se3 超导铁电异质结,并通过扫描隧道显微镜表征了其表面原子结构与电子结构. 进一步的扫描隧道谱测量显示不同层厚 Pb 岛的量子阱态消失, 并且我们在4.5 K 的温度下没有观察到超导能隙, 表明铁电衬底会影响 Pb 岛的电子结构, 甚至其超导特性. 这些发现为理解铁电衬底对超导性的影响提供了参考, 并为调控低维量子材料中的电子结构及超导性提供了新的思路. 相似文献
4.
为了解决限制近红外单发射区InGaAs/AlGaAs量子阱半导体激光二极管失效阈值功率提升的腔面光学灾变损伤问题,研制了一种带有Si杂质诱导量子阱混杂非吸收窗口的新型激光二极管,并对其性能进行了测试分析。首先,对于带有非吸收窗口的二极管,在其谐振腔上方前后腔面附近的窗口区域覆盖50 nm Si/100 nm SiO2组合介质层,在远离腔面的增益区域覆盖50 nm Si/100 nm TiO2组合介质层,并采用875℃/90 s快速热处理工艺促进Si杂质扩散诱导量子阱混杂并去除非辐射复合中心。然后,基于相同外延结构、相同流片工艺制备了无非吸收窗口的激光二极管作对照组。测试结果显示,带有非吸收窗口的新型激光二极管平均峰值输出功率提升约33.6%,平均峰值输出电流提升约50.4%,腔面光学灾变损伤的发生概率和破坏程度均明显降低,且其阈值电流、斜率效率及半高全宽等特性也无任何退化。该研究证明,采用Si杂质诱导量子阱混杂技术制备的非吸收窗口,对近红外单发射区InGaAs/AlGaAs量子阱半导体激光二极管腔面光学灾变损伤有明显的抑制效果。 相似文献
5.
在这篇文章中, 作者研究涉及凹凸非线性项的Kirchhoff型问题-(a + b ∫R3|▽u|2dx) Δu + λV (x)u = μf(x)|u|q?2u + |u|p?2u, x ∈ R3,u ∈ H1(R3),其中a,b > 0 是常数, λ, μ > 0 是参数, 1 < q < 2, 4 < p < 6 且 V 是一个非负连续位势. 在f(x) 和 V 的合适条件下,此问题正解的存在性和集中性能够通过Nehari 流形和Ekeland 变分原理得到. 相似文献
6.
Because of its unique optoelectronic properties,people have studied the characteristics of polarons in various quantum well(QW)models.Among them,the asymmetrical semiexponential QW(ASEQW)is a new model for studying the structure of QWs in recent years.It is of great significance to study the influences of the impurity and anisotropic parabolic confinement potential(APCP)on the crystal’s properties,because some of the impurities,usually regarded as Coulomb’s impurity potential(CIP),will exist in the crystal more or less,and the APCP has flexible adjustment parameters.However,the energy characteristics of the ASEQW under the combined actions of impurities and APCP have not been studied,which is the motivation of this paper.Using the linear combination operation and Lee-Low-Pines unitary transformation methods,we investigate the vibrational frequency and the ground state energy of the strong coupling polaron in an ASEQW with the influences of the CIP at the origin of coordinates and APCP,and make a comparison between our results and previous literature’s.Our numerical results about the energy properties in the ASEQW influenced by the CIP and APCP may have important significances for experimental design and device preparation. 相似文献
7.
Electronic properties and interfacial coupling in Pb islands on single-crystalline graphene 下载免费PDF全文
Jing-Peng Song 《中国物理 B》2022,31(3):37401-037401
Introducing metal thin films on two-dimensional (2D) material may present a system to possess exotic properties due to reduced dimensionality and interfacial effects. We deposit Pb islands on single-crystalline graphene on a Ge(110) substrate and studied the nano- and atomic-scale structures and low-energy electronic excitations with scanning tunneling microscopy/spectroscopy (STM/STS). Robust quantum well states (QWSs) are observed in Pb(111) islands and their oscillation with film thickness reveals the isolation of free electrons in Pb from the graphene substrate. The spectroscopic characteristics of QWSs are consistent with the band structure of a free-standing Pb(111) film. The weak interface coupling is further evidenced by the absence of superconductivity in graphene in close proximity to the superconducting Pb islands. Accordingly, the Pb(111) islands on graphene/Ge(110) are free-standing in nature, showing very weak electronic coupling to the substrate. 相似文献
8.
S.V. Ivanov M.Yu. Chernov V.A. Solovev P.N. Brunkov D.D. Firsov O.S. Komkov 《Progress in Crystal Growth and Characterization of Materials》2019,65(1):20-35
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ~8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic InxAl1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded InxAl1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As4/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?107 cm?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform. 相似文献
9.
以建立高效的动态分析方法为出发点,以边单元作为求解点,改进传统的格林元方法,减少未知数和求解矩阵维度;并提出基于改进格林元的加密网格加密方法,保证考虑复杂裂缝网络的压裂水平井动态模拟的早期精度.退化模型与半解析解、数值模拟结果进行对比,验证本文基于加密网格的改进格林元方法的准确性和动态分析的高效性.最后进行动态响应的敏感性分析,结果表明:①格林元方法是一种高精度的动态模拟方法,将求解节点设置在网格的边上可以提高压裂水平井动态模拟的速度;②改进格林元方法的加密基于叠加原理,不需要通过插值近似,其求解精度高.在相同加密网格条件下,基于本文改进格林元方法的加密效果比有限差分加密效果更佳;③复杂裂缝导流能力、改造区渗透率提高倍数、改造区大小等参数对压裂水平井动态特征影响较大,在动态分析和参数反演时,应着重考虑这些因素的影响. 相似文献
10.
研究四阶带有阻尼项的非线性波动方程的解的初边值问题,利用位势井方法,证明了当初值满足一定条件时解发生爆破.将有关该系统爆破性质的研究结果一般化,通过证明得到了该系统较好的性质. 相似文献