Electrochemically Determining Electronic Structure of ZnO Quantum Dots with Different Surface Ligands

The electronic structure of quantum dots (QDs) including band edges and possible trap states is an important physical property for optoelectronic applications. The reliable determination of the energy levels of QDs remains a big challenge. Herein we employ cyclic voltammetry (CV) to determine the energy levels of three types of ZnO QDs with different surface ligands. Coupled with spectroscopic techniques, it is found that the onset potential of the first reductive wave is likely related to the conduction band edges while the first oxidative wave originates from the trap states. The determined specific energy levels in CV further demonstrates that the ZnO QDs without surface ligands mainly have oxygen interstitial defects whilst the ZnO QDs covered with ligands contain oxygen vacancies. The present electrochemical method offers a powerful and effective way to determine the energy levels of wide bandgap ZnO QDs, which will boost their device performance.     

Melamine–Barbiturate Supramolecular Assembly as a pH-Dependent Organic Radical Trap Material

In the last two decades, a large number of self-assembled materials were synthesized and they have already found their way into large-scale industry and science. Hydrogen-bond-based supramolecular adducts are found to have unique properties and to be perfect host structures for trapping target molecules or ions. Such chemical systems are believed to resemble living matter and can substitute a living cell in a number of cases. Herein, a report on an organic material based on supramolecular assembly of barbituric acid and melamine is presented. Surprisingly, the structure is found to host and stabilize radicals under mild conditions allowing its use for biological applications. The number of free radicals is found to be easily tuned by changing the pH of the environment and it increases when exposed to light up to a saturation level. We describe a preparation method as well as stability properties of melamine–barbiturate self-assembly, potentiometric titration, and hydrogen ions adsorption data and EPR spectra concerning the composite.     

On the derivation of the entropy of ideal quantum gases confined in a three-dimensional harmonic potential

In this work,the entropy functions of ideal quantum gases in a three-dimensional harmonic trap are analytically calculated using temperature as an explicit variable.Afterward,the applicability of the analytical formulas is validated by comparison with the numerical calculation.The results illustrate that the obtained functions could be applied for the whole temperature regime with a maximum relative deviation of less than 7.5%in the vicinity of the critical temperature Tcin the case of Bose gases.Meanwhile,for Fermi gases,although the analytical formula fits well at very low-and high-temperature regimes,it cannot be applied at temperature in the range[0.3-0.5]T_F,where T_F is the Fermi temperature.In addition,the consistency between our formulas and classical ones at significantly high temperatures is also discussed.     

磁光平面波导的单向传播特性

表面磁等离子体(surfacemagnetoplasmons,SMPs)是一种在电介质和偏置磁场作用下磁光材料界面处传播的近场电磁波.其独特的非互易传播特性引起了大量科研工作的关注,但在具体的波导结构设计上仍存在很多问题.本文研究了一种银-硅-磁光材料的3层平面波导结构,SMPs在磁光材料和硅的界面处传播,发现在特定的频率范围内,SMPs的基模及高阶模式均具有正向或反向的单向传播特性.分别计算了旋磁与旋电材料平面波导的色散方程,研究了硅层厚度与外加磁场对能带结构及SMPs单向传播区域的影响,发现无论是旋磁或旋电材料的结构,硅层厚度的增加使高阶模式使高阶模式出现在更低的频率位置,使单向传输带宽变小甚至消失,外加磁场的变大使磁光材料的能带结构频率增大的同时带隙中也引入了高阶模式.计算了2种磁光材料平面波导的正向和反向的单向传播带宽宽度,发现旋磁材料YIG的单向SMPs模式出现在GHz波段,最大单向带宽可达到2.45 GHz;旋电材料InSb的单向SMPs模式出现在THz波段,最大单向带宽达到3.9 THz.     

RIG型磁光薄膜的研究进展及应用

随着光通信技术与光子集成电路的发展,非互易性器件作为光通信系统中重要的组成部分得到了越来越广泛的研究与应用。基于磁光效应制成的磁光隔离器和环行器是目前应用最为广泛的非互易性器件,为了将非互易性器件整块集成在硅片上,需制备性能与块状磁光材料相当的磁光薄膜。在近红外通信波段(1 550 nm),以钇铁石榴石(Y₃Fe₅O₁₂,YIG)为代表的稀土铁石榴石(RIG)具备优良的磁光效应,是最具应用前景的磁光材料之一。研究发现,使用稀土离子对YIG薄膜进行掺杂可以有效改善其磁光性能,尤其是Bi³⁺和Ce³⁺掺杂的YIG表现出巨法拉第效应。本文首先介绍了法拉第效应原理,介绍了三种常见磁光薄膜的生长方法,回顾了近年来的主要研究成果,介绍了磁光薄膜在光隔离器和环行器中的应用,最后对磁光薄膜的未来发展趋势进行了展望。     

凝胶渗透色谱-气相色谱-离子阱质谱法测定桔梗原药和当归提取物中101种农药残留

建立了凝胶渗透色谱（GPC）-气相色谱-离子阱质谱同时检测桔梗原药和当归提取物中101种农药残留的分析方法。方法采用乙腈超声辅助提取桔梗原药和当归提取物,浓缩提取液至近干后用乙酸乙酯-环己烷（1∶1, v/v）复溶,采用凝胶渗透色谱法（选取40 cm长、内径20 mm的凝胶渗透色谱柱）对样品进行净化,弃去前段含脂类、色素等杂质的流出液,收集17~30 min洗脱液并旋转蒸发浓缩至近干,甲苯1 mL定容上机。选用DB-5MS毛细管色谱柱分离待测物,通过离子阱质谱实现对101种农药残留的高效检测。方法通过优化前处理条件和离子阱二级质谱参数,有效降低了复杂中药基质对待测化合物的干扰,最大限度提高了样品中农药的定量准确性和回收率,101种农药3水平添加的平均回收率为58.3%~108.9%,每个添加水平10次独立重复测定的相对标准偏差为0.4%~16.5%,检出限（LOD）范围为0.2~40.0 μg/kg,可满足当前韩国、日本、欧洲规定的最大残留限量（maximum residue limits, MRLs）要求。方法具有操作简单快速、灵敏度高、重复性好等特点,凝胶渗透色谱技术的应用克服了固相萃取小柱净化容量不足的弊端,离子阱技术的应用可以进一步排除共流出基体杂质的干扰,提高定量和定性的准确性,检测效果优于常用的气相色谱-质谱法,是对中药中同时分析多种农药残留检测方法的有益补充。     

Metabolite Profiling and Characterization of LW6, a Novel HIF-1α Inhibitor,as an Antitumor Drug Candidate in Mice

A novel HIF (hypoxia-inducible factor)-1α inhibitor, the (aryloxyacetylamino)benzoic acid derivative LW6, is an anticancer agent that inhibits the accumulation of HIF-1α. The aim of this study was to characterize and determine the structures of the metabolites of LW6 in ICR mice. Metabolite identification was performed using a predictive multiple reaction monitoring-information dependent acquisition-enhanced product ion (pMRM-IDA-EPI) method in negative ion mode on a hybrid triple quadrupole-linear ion trap mass spectrometer (QTRAP). A total of 12 metabolites were characterized based on their MS/MS spectra, and the retention times were compared with those of the parent compound. The metabolites were divided into five structural classes based on biotransformation reactions: amide hydrolysis, ester hydrolysis, mono-oxidation, glucuronidation, and a combination of these reactions. From this study, 2-(4-((3r,5r,7r)-adamantan-1-yl)phenoxy)acetic acid (APA, M7), the metabolite produced via amide hydrolysis, was found to be a major circulating metabolite of LW6 in mice. The results of this study can be used to improve the pharmacokinetic profile by lowering the clearance and increasing the exposure relative to LW6.     

Determination of acid volatile sulphur in river sediments by ICP-OES coupled with purge and trap method

The developed and tested method is based on the acid volatile sulphur (AVS) releasing from a sample of sediment by acidification with hydrochloric acid and sequential absorption of released hydrogen sulphide into the absorption solution of sodium hydroxide. Total sulphur absorbed in the absorption solution is subsequently determined by inductively coupled plasma optical emission spectrometry (ICP-OES) technique. The method was tested using both model and real samples of the river sediment. Obtained results were compared with the results of iodometric determination as the method routinely used for the AVS determination. In case of using ICP-OES with purge and trap, there is no spectral interference of calcium; therefore for the determination of sulphur, it is possible to use atomic emission line of sulphur S I 180.7 nm. The tested method provides the results comparable with the iodometric method within the range of tested concentrations. The detection limit (LOD) of this method is 0.09 mg· S^2? ? L^?1 in the absorption solution which corresponds to 0.23 mg S^2?·kg^?1 in a sediment. Value of LOD is comparable with the iodometric determination.     

基于精确质量数筛选的超高效液相色谱-线性离子阱/静电场轨道阱质谱法快速鉴别化妆品中的邻苯二甲酸酯

采用超高效液相色谱-线性离子阱/静电场轨道阱组合式高分辨质谱联用(UPLC-LTQ Orbitrap MS),结合邻苯二甲酸酯(PAEs)精确质量数,建立了快速筛选、定性识别化妆品中PAEs的分析方法。不同种类的化妆品样品经甲醇提取,Waters ACQUITY UPLC BEH C18色谱柱(100×2.1mm,1.7μm)分离,以乙腈-水(含5mmol/L乙酸铵和0.1%甲酸)为流动相梯度洗脱。通过UPLC-LTQ/Orbitrap MS的正离子模式全扫描分析,获得提取物中PAEs化合物母离子和主要碎片离子精确质量数,实现对化妆品的快速筛选。以保留时间和数据依赖扫描(Data Dependent Scan)模式获得的子离子质谱图进行定性确证。所发展的UPLC-LTQ Orbitrap MS方法分离度高、灵敏度好,所考察的14种常见PAEs的精确质量数相对偏差小于5.0×10-6,线性良好,相关系数大于0.99,14种PAEs的检出限在0.05~0.5mg/kg范围内,能满足化妆品实际样品的分析要求。对50种化妆品实际样品进行筛选,结果良好,说明该方法是化妆品中PAEs快速筛选、定性识别的有效方法。     

Hot carrier degradation mechanism interpretation by lateral distribution of interface and bulk trap density

We investigated the drain avalanche hot carrier effect (DAHC) of p-type metal-oxide-semiconductor field effect transistor of 0.14 μm channel length (PMOSFET) with SiON gate dielectric. Using three different stress conditions of substrate maximum current, the changes to threshold voltage, maximum transconductance, saturation current and channel leakage current was monitored. Concurrently, the lateral distribution of interface trap density (N_it) and bulk trapped charge density (N_ot) with stress time has been extracted along the 70 nm half channels from gate edge to drain junction, which is the first endeavor in describing charge traps along sub 100 nm short channels. The degradation of the PMOSFET was described by combining electrical property with N_it and N_ot profiles. Hot electron punch through (HEIP) effect was evidenced by negative Not distribution near the drain junction while more severe hot carrier degradation was successfully demonstrated by the empirical power law dependence of the electrical parameters N_it and N_ot. We have studied the evolution of degradation behavior along highly scaled tens of nanometer channel, and N_it and N_ot profile offers systematic study and interpretation of degradation mechanism of hot carrier effect in MOSFET devices.