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1.
二硫化钼纳米带按边界结构特征可分为锯齿型和扶手型,在制备过程中,不可避免地会存在一定的缺陷,其中硫空位(VS)最为常见,它将改变纳米结构,进而影响其电子性质。本文采用密度泛函理论来研究S空位对扶手型二硫化钼纳米带性质的影响。计算结果表明:纯扶手型二硫化钼纳米带(AMoS2NRs)为非磁性半导体,但其物性受S空位的位置及浓度所调制。当S空位出现在纳米带内部时,其性质不变。但当S空位在纳米带边缘时,AMoS2NRs被调节成半金属;并随着S空位的浓度的增加,其物性从半金属转变为稀磁半导体。这一有趣的发现将使得低维MoS2纳米材料在自旋电子学上有更宽广的应用。  相似文献   
2.
1 INTRODUCTION Carbon nanotubes have many potential applica- tions due to their unique structures and properties[1~4]. Physicists have been studying their electrical, me- chanical and other properties since their discove- ries[5, 6]. Recently, chemists are interested in carbon nanotubes because their properties can be altered by chemical functionalization[7~14], and these functiona- lized nanotubes can undergo further chemical trea- tment. So the potential application range of such na- …  相似文献   
3.
For a connected graph G we denote by d(G,k) the number of vertex pairs at distance k. The Hosoya polynomial of G is H(G,x) = ∑k≥0 d(G,k)xk. In this paper, analytical formulae for calculating the polynomials of armchair open‐ended nanotubes are given. Furthermore, the Wiener index, derived from the first derivative of the Hosoya polynomial in x = 1, and the hyper‐Wiener index, from one‐half of the second derivative of the Hosoya polynomial multiplied by x in x = 1, can be calculated. © 2006 Wiley Periodicals, Inc. Int J Quantum Chem, 2007  相似文献   
4.
ABSTRACT

Structures of small lengths of capped (3,3), (4,4) and (5,5) single-walled carbon nanotubes (SWCNTs) and their structures decorated by Pt atom and Ptn clusters (n = 2–4) were obtained using density functional theory calculations. Binding abilities of Pt atom and Ptn clusters on the outer surface of SWCNTs at various adsorption sites were explored. Adsorptions of H2 onto Pt atom of the Pt-decorated (3,3), (4,4) and (5,5) SWCNTs were studied and their adsorption energies are reported. The thermodynamic properties and equilibrium constants for H2 adsorptions on the Pt4-decorated (3,3), (4,4) and (5,5) SWCNTs were obtained. The adsorption of H2 on the Pt atom of the Pt4/(3,3) SWCNT was found to be the most preferred reaction of which enthalpy and free energy changes at room temperature are ?46.61 and ?23.99 kcal/mol, respectively.  相似文献   
5.
采用密度泛函理论(DFT)方法,在LDA+U水平下详细研究了电场和应力作用下氮钝化扶手型氧化锌纳米带(NA8-ZnONRs)的电子结构和磁特性。对体系的电子结构和磁性进行详细的计算,结果表明:本征扶手型氧化锌纳米带(A8-ZnONRs)是无磁性P型半导体。氮钝化后NA8-ZnONRs具有铁磁金属性,其磁性主要来源于N2p轨道(2.56μB)和O2p轨道(0.69μB)电子的自旋极化,总磁矩为3.21μB。NA8-ZnONRs体系对X方向电场有较强的响应,通过调节X方向电场的幅度,可以有效调节体系的磁矩。在X方向电场作用下体系仍具有铁磁金属性,磁性也主要来源于N2p和O2p轨道电子的自旋极化。施加X方向应力作用后,体系仍表现为铁磁金属性。与NA8-ZnONRs纳米带磁矩相比,体系的总磁矩均发生了较大幅度的增长,表明体系对应力作用具有较明显的相应。但随着应力幅度的调节,总磁矩的变化较平坦。表明施加应力可以有效调节体系的磁矩,但在较小应力范围内,体系对应力变化的相应不明显。  相似文献   
6.
金子飞  童国平  蒋永进 《物理学报》2009,58(12):8537-8543
根据π电子的紧束缚模型,将电子的次近邻和第三近邻跳跃能考虑在内,得到扶手椅型石墨烯纳米带(AGRNs)能带结构的解析解.讨论了由次近邻和第三近邻电子跳跃引起的能带和能隙变化,发现次近邻和第三近邻跳跃分别对带隙产生增大和减小的影响. 比较了边界弛豫与非近邻跳跃之间的互相竞争关系. 当纳米带的宽度n为奇数时,二维石墨面的紧束缚模型中所固有的van Hove奇异性表现为AGRNs中的无色散带. 当AGRNs宽度增加时,能谱趋向于二维石墨烯时的能谱结构. 关键词: 扶手椅型石墨烯纳米带 非近邻跳跃 边界弛豫 电子结构  相似文献   
7.
We investigate the electronic and transport properties of one-dimensional armchair phosphorene nanoribbons(APNRs) containing atomic vacancies with different distributions and concentrations using ab initio density functional calculations. It is found that the atomic vacancies are easier to form and detain at the edge region rather than a random distribution through analyzing formation energy and diffusion barrier. The highly local defect states are generated at the vicinity of the Fermi level, and emerge a deep-to-shallow transformation as the width increases after introducing vacancies in APNRs.Moreover, the electrical transport of APNRs with vacancies is enhanced compared to that of the perfect counterparts. Our results provide a theoretical guidance for the further research and applications of PNRs through defect engineering.  相似文献   
8.
ABSTRACT

The electronic structures of C/B/Al-doped armchair GaN nanoribbons (aGaNNRs) are systematically studied by using density functional theory. We find that the original aGaNNRs are direct band gap semiconductors and that the gaps monotonically decrease with increasing widths. Interestingly, the B- or Al-doped aGaNNRs are also direct-band gap semiconductors with a slightly larger gap than their undoped aGaNNRs, while the C-doped aGaNNRs display metallic characteristics with an impurity state across the Fermi level in band structures. The semiconducting or metallic behaviours of C/B/Al-doped aGaNNRs can be explained by the orbital coupling between the extrinsic atom and primary Ga, N in their partial density of states. Our results show a useful way to modulate the band gaps of aGaNNRs.

Using the density-functional theory, we performed a theoretical research to study the electronic structures of C/B/Al-doped armchair gallium nitride nanoribbons. The calculated band structures show that the perfect and original aGaNNRs are direct semiconductors regardless of ribbon widths, and gaps monotonically decrease with increasing the widths. The B/Al-doped aGaNNRs are semiconductors with a slightly larger gap, while metallic behavior presents in C-doped aGaNNRs with an impurity band across the EF. The results show a useful way to modulate the band gaps of aGaNNRs.  相似文献   
9.
3,4-二苯基-2,5-二(3,5-二溴苯基)环戊二烯酮与二苯乙炔经Diels-Alder环加成反应制得1,2,4,5-四苯基-3,6-二(3,5-二溴苯基)苯(6);6经Suzuki偶联反应制得1,2,4,5-四苯基-3,6-二[3,5-二(4-十二烷基苯基)]苯基苯(8);8经路易斯酸催化的Scholl氧化脱氢关环反应合成了一个新的扶手型分子石墨烯,其结构经1H NMR,13C NMR和MALDI-TOF-MS表征。  相似文献   
10.
We propose that an atom of calcium (Ca) which is an alkaline earth metal on encapsulation inside of a metallic armchair (5,5) (SWNT) species can have stronger amino acid interactions. From our calculations of various physical parameters we depict several configurations in which such an endo[metallo] SWNT can be modified by an internally placed Ca atom. Density functional theory (DFT) calculations reveal that the most favorable interactions of the SWNT system is with tryptophan, tyrosine, and phenylalanine that can be directly correlated to the backbone geometry of the amino acid species. © 2009 Wiley Periodicals, Inc. Int J Quantum Chem, 2010  相似文献   
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